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ZTX237

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size160KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX237 Overview

RF SMALL SIGNAL TRANSISTOR

ZTX237 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.25 V

ZTX237 Related Products

ZTX237 ZTX107 ZTX108 ZTX303 ZTX304 ZTX302 ZTX238 ZTX301
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - incompatible incompatible
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors - Zetex Semiconductors Zetex Semiconductors
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 - IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Reach Compliance Code unknow unknow unknow unknow unknow - unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.1 A 0.1 A 0.5 A 0.5 A - 0.2 A 0.5 A
Collector-emitter maximum voltage 45 V 50 V 30 V 45 V 70 V - 30 V 35 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 120 125 125 50 50 - 120 50
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 - R-PSIP-W3 R-PSIP-W3
JESD-609 code e0 e0 e0 e0 e0 - e0 e0
Number of components 1 1 1 1 1 - 1 1
Number of terminals 3 3 3 3 3 - 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C - 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE - IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 235 235 235 235 235 - 235 235
Polarity/channel type NPN NPN NPN NPN NPN - NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W - 0.35 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount NO NO NO NO NO - NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE - WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 150 MHz 350 MHz 350 MHz 150 MHz 150 MHz - 150 MHz 150 MHz
VCEsat-Max 0.25 V - - 0.35 V 0.35 V - 0.25 V 0.25 V
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