ZTX300 datasheet, PDF - EEWORLD Datasheet

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ZTX300: DescriptionNPN SILICON PLANAR SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size46KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZTX300 Overview

NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

ZTX300 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSIP-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.35 V

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ZTX300

ISSUE 2 MARCH 94

NPN SILICON PLANAR

SMALL SIGNAL TRANSISTOR

TYPICAL CHARACTERISTICS

0.95

=30

0.25

0.90

0.20

=10

0.85

=30

0.15

BE(sat)

- (Volts)

0.75

CE(sat)

- (Volts)

0.80

0.10

E-Line

TO92 Compatible

SYMBOL

CBO

CEO

EBO

tot

stg

VALUE

500

300

-55 to +175

UNIT

°C

0.05

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

0.70

Collector Current (mA)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

BE(sat)

v I

CE(sat)

v I

1.0

=6V

=50mA

=5mA

0.9

200

0.8

=50mA

=10mA

150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

SYMBOL

(BR)CBO

CEO(sus)

(BR)EBO

CBO

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

CE(sat)

BE(sat)

Static Forward Current h

Transfer Ratio

Output Capacitance

obo

Transition

Frequency

0.65

150

MIN.

0.2

Collector Cut-Off

Current

0.2

0.35

1.0

300

MHz

TYP.

MAX.

UNIT

BE(sat)

- (Volts)

0.7

=100µA

=10mA

=1mA

CONDITIONS.

=10

A, I

=5mA, I

=10

A, I

=25V, I

=4V, I

=50mA, I

=5mA*

=10mA, I

=1mA*

=10mA, V

=6V*

0.6

% Change of h

100

0.5

-100

150

-50

100

-100

-50

100

150

Ambient Temperature (°C)

Emitter-Base

Breakdown Voltage

BE(sat)

v Ambient Temperature

150

-55°C

+25°C

+100°C

0.20

0.18

100

=50mA

=5mA

0.16

% Change of h

0.14

CE(sat)

- (Volts)

0.12

=10mA, V

=6V

f=100MHz

100

150

-50

0.1

100

1000

0.10

-100

=6V, I

f=1MHz

Noise Figure

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

3-156

=6V, f=1KHz

=1500

Ω

, I

=100

Collector Current (mA)

Ambient Temperature (°C)

v I

CE(sat)

v Ambient Temperature

3-157

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