ZTX1051A
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX1051A
180
1.0
D=1(D.C)
160
t1
140
Am
120
tp
D=t1
0.75
tp
C
B
E
t
en
bi
100
D=0.5
m
te
0.50
ISSUE 3 FEBRUARY 95
FEATURES
* B
CEV
=150V
* Very Low Saturation Voltage
* High Gain
* Inherently Low Noise
APPLICATIONS
* Emergency Lighting
* Low Noise Audio
80
D=0.2
e
ur
at
r
pe
60
D=0.1
E-Line
TO92 Compatible
D=0.05
40
0.25
20
Single Pulse
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
150
40
5
10
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
200
0.1ms
1ms
10ms
100ms
1s
10s
100s
Max Power Dissipation - (Watts)
0
-40
0
40
80
120
160
Pulse Width
T -Temperature
(°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX ZTX1051A Spice model Last revision 16/12/94
*
.MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120
+
ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+
+
ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010
CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357
+
VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9
*
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
©
1995 ZETEX PLC
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
ZTX1051A
ZTX1051A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
I
C
/I
B
=20
I
C
/I
B
=40
I
C
/I
B
=100
0.4
0.2
-55°C
+25°C
+100°C
+175°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
V
I
C
=100µA
0.6
0.8
I
C
/I
B
=100
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
CONDITIONS.
Collector-Base Breakdown
Voltage
V
IC=100µA
0.4
V
(BR)CBO
150
190
Collector-Emitter
Breakdown Voltage
V
0.2
V
CES
IC=10mA
IC=100µA, V
EB
=1V
1mA
10mA 100mA
1A
10A
150
190
Collector-Emitter
Breakdown Voltage
V
V
I
E
=100µA
I
C
-Collector Current
V
CEO
40
60
Collector-Emitter
Breakdown Voltage
V
CEV
150
190
1mA
10mA 100mA
1A
10A
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.8
I
C
-Collector Current
V
CE(sat)
v I
C
nA
nA
nA
600
500
400
300
200
100
1mA
10mA 100mA
1A
10A
-55°C
+25°C
+100°C
V
CE(sat)
v I
C
Collector Cut-Off Current
V
CB
=120V
V
EB
=4V
VCES=120V
700 V
CE
=2V
I
CBO
0.3
10
Emitter Cut-Off Current
I
EBO
0.3
10
1.2
1.0
0.8
0.6
0.4
0.2
Collector Emitter Cut-Off
Current
I
CES
0.3
10
I
C
/I
B
=100
-55°C
+25°C
+100°C
+175°C
Collector-Emitter Saturation V
CE(sat)
Voltage
mV
mV
IC=4A, V
CE
=2V*
I
C
=4A, I
B
=100mA*
17
75
165
25
110
210
mV
mV
mV
I
C
=0.2A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=4A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
920
1000
Base-Emitter Turn-On
Voltage
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
I
C
=4A, I
B
=±40mA, V
CC
=10V
V
CB
=10V, f=1MHz
I
C
=50mA, V
CE
=10V
f=100MHz
V
BE(on)
825
950
1mA
10mA 100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
Static Forward Current
Transfer Ratio
h
FE
290
300
190
45
440
450
310
70
1200
h
FE
v I
C
V
BE(sat)
v Ic
Transition Frequency
f
T
155
1.0
0.8
0.6
0.4
0.2
V
CE
=2V
-55°C
+25°C
+100°C
+175°C
10
Single Pulse Test Tamb=25C
Output Capacitance
C
obo
27
40
1
Switching Times
t
on
100
DC
1s
100ms
10ms
1ms
100us
0.1
t
off
300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
1mA
10mA 100mA
1A
10A
0.01
100mV
1V
10V
100V
I
C
-Collector Current
V
CE
- Collector Voltage
V
BE(on)
v I
C
Safe Operating Area
ZTX1051A
ZTX1051A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
I
C
/I
B
=20
I
C
/I
B
=40
I
C
/I
B
=100
0.4
0.2
-55°C
+25°C
+100°C
+175°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
V
I
C
=100µA
0.6
0.8
I
C
/I
B
=100
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
CONDITIONS.
Collector-Base Breakdown
Voltage
V
IC=100µA
0.4
V
(BR)CBO
150
190
Collector-Emitter
Breakdown Voltage
V
0.2
V
CES
IC=10mA
IC=100µA, V
EB
=1V
1mA
10mA 100mA
1A
10A
150
190
Collector-Emitter
Breakdown Voltage
V
V
I
E
=100µA
I
C
-Collector Current
V
CEO
40
60
Collector-Emitter
Breakdown Voltage
V
CEV
150
190
1mA
10mA 100mA
1A
10A
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.8
I
C
-Collector Current
V
CE(sat)
v I
C
nA
nA
nA
600
500
400
300
200
100
1mA
10mA 100mA
1A
10A
-55°C
+25°C
+100°C
V
CE(sat)
v I
C
Collector Cut-Off Current
V
CB
=120V
V
EB
=4V
VCES=120V
700 V
CE
=2V
I
CBO
0.3
10
Emitter Cut-Off Current
I
EBO
0.3
10
1.2
1.0
0.8
0.6
0.4
0.2
Collector Emitter Cut-Off
Current
I
CES
0.3
10
I
C
/I
B
=100
-55°C
+25°C
+100°C
+175°C
Collector-Emitter Saturation V
CE(sat)
Voltage
mV
mV
IC=4A, V
CE
=2V*
I
C
=4A, I
B
=100mA*
17
75
165
25
110
210
mV
mV
mV
I
C
=0.2A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=4A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
920
1000
Base-Emitter Turn-On
Voltage
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
I
C
=4A, I
B
=±40mA, V
CC
=10V
V
CB
=10V, f=1MHz
I
C
=50mA, V
CE
=10V
f=100MHz
V
BE(on)
825
950
1mA
10mA 100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
Static Forward Current
Transfer Ratio
h
FE
290
300
190
45
440
450
310
70
1200
h
FE
v I
C
V
BE(sat)
v Ic
Transition Frequency
f
T
155
1.0
0.8
0.6
0.4
0.2
V
CE
=2V
-55°C
+25°C
+100°C
+175°C
10
Single Pulse Test Tamb=25C
Output Capacitance
C
obo
27
40
1
Switching Times
t
on
100
DC
1s
100ms
10ms
1ms
100us
0.1
t
off
300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
1mA
10mA 100mA
1A
10A
0.01
100mV
1V
10V
100V
I
C
-Collector Current
V
CE
- Collector Voltage
V
BE(on)
v I
C
Safe Operating Area
ZTX1051A
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX1051A
180
1.0
D=1(D.C)
160
t1
140
Am
120
tp
D=t1
0.75
tp
C
B
E
t
en
bi
100
D=0.5
m
te
0.50
ISSUE 3 FEBRUARY 95
FEATURES
* B
CEV
=150V
* Very Low Saturation Voltage
* High Gain
* Inherently Low Noise
APPLICATIONS
* Emergency Lighting
* Low Noise Audio
80
D=0.2
e
ur
at
r
pe
60
D=0.1
E-Line
TO92 Compatible
D=0.05
40
0.25
20
Single Pulse
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
150
40
5
10
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
200
0.1ms
1ms
10ms
100ms
1s
10s
100s
Max Power Dissipation - (Watts)
0
-40
0
40
80
120
160
Pulse Width
T -Temperature
(°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX ZTX1051A Spice model Last revision 16/12/94
*
.MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120
+
ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+
+
ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010
CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357
+
VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9
*
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
©
1995 ZETEX PLC
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
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