Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (t
ON
: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and
military applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411 and DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
44 V Supply Max Rating
± 15 V Analog Signal Range
On-Resistance - r
DS(on)
: 25
Ω
Fast Switching - t
ON
: 110 ns
Ultra Low Power - P
D
: 0.35 µW
TTL, CMOS Compatible
Single Supply Capability
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
S
1
V-
NC
GND
S
4
Key
4
5
6
7
8
9
10
11
12
13
3
2
DG411
LCC
D
1
IN
1
NC IN
2
D
2
1
20
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
TRUTH TABLE
Logic
0
1
Logic "0"
≤
0.8 V
Logic "1"
≥
2.4 V
DG411
ON
OFF
DG412
OFF
ON
D
4
IN
4
NC IN
3
D
3
Top View
DG413
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
S
4
D
3
IN
3
9
D
4
10
Key
4
5
6
7
8
D
1
3
S
1
V-
NC
GND
2
DG413
LCC
IN
1
NC IN
2
1
20
D
2
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
TRUTH TABLE
Logic
0
1
Logic "0"
≤
0.8 V
Logic "1"
≥
2.4 V
SW
1
, SW
4
OFF
ON
SW
2
, SW
3
ON
OFF
11
12
13
D
3
IN
4
NC IN
3
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
www.vishay.com
1
DG411/412/413
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG411/DG412
- 40 to 85 °C
16-Pin Plastic DIP
Package
Part Number
DG411DJ
DG411DJ-E3
DG412DJ
DG412DJ-E3
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
16-Pin Narrow SOIC
DG412DY
DG412DY-E3
DG412DY-T1
DG412DY-T1-E3
DG413
16-Pin Plastic DIP
- 40 to 85 °C
16-Pin Narrow SOIC
DG413DJ
DG413DJ-E3
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
- 40 to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
GND to V-
V
L
Digital Inputs
a
, V
S
, V
D
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
(AK, AZ Suffix)
(DJ, DY Suffix)
16-Pin Plastic DIP
c
Power Dissipation (Package)
b
16-Pin Narrow SOIC
d
16-Pin CerDIP
e
LCC-20
e
Limit
44
25
(GND - 0.3) to (V+) + 0.3
(V-) -2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
470
600
900
900
mW
V
Unit
mA
°C
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
DG411/412/413
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Symbol
V
ANALOG
r
DS(on)
I
S(off)
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
e
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
f = 1 MHz
R
L
= 300
Ω,
C
L
= 35 pF
V
S
=
±
10 V, See Figure 2
DG413 Only, V
S
= 10 V
R
L
= 300
Ω,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
Ω
C
L
= 10 nF
R
L
= 50
Ω,
C
L
= 5 pF,
f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
Full
Room
Full
Room
Full
Room
Full
110
100
175
240
145
160
175
220
145
160
I
D(on)
V+ = 13.5 V, V- = - 13.5 V
I
S
= - 10 mA, V
D
=
±
8.5 V
V+ = 16.5, V- = - 16.5 V
V
D
=
±
15.5 V, V
S
=
±
15.5 V
V+ = 16.5 V, V- = - 16.5 V
V
S
= V
D
=
±
15.5 V
V
IN
under test = 0.8 V
V
IN
under test = 2.4 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
25
Typ
c
A Suffix
- 55 to 125 °C
Min
d
- 15
Max
d
15
35
45
- 0.25
- 20
- 0.25
- 20
- 0.4
- 40
- 0.5
- 0.5
0.25
20
0.25
20
0.4
40
0.5
0.5
- 0.25
-5
- 0.25
-5
- 0.4
- 10
- 0.5
- 0.5
D Suffix
- 40 to 85 °C
Min
d
- 15
Max
d
15
35
45
0.25
5
0.25
5
0.4
10
0.5
0.5
nA
Unit
V
Ω
±
0.1
±
0.1
±
0.1
I
IL
I
IH
0.005
0.005
µA
ns
25
5
68
85
9
9
35
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
µA
pF
dB
pC
I+
I-
I
L
I
GND
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
www.vishay.com
3
DG411/412/413
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
a
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
V+ = 13.5 V, V
IN
= 0 or 5 V
I
L
I
GND
Room
Hot
Room
Hot
Room
Hot
Room
Hot
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-5
1
5
-1
-5
1
5
1
5
µA
t
ON
t
OFF
t
D
Q
R
L
= 300
Ω,
C
L
= 35 pF
V
S
=
8
V, See Figure 2
DG413 Only, V
S
= 8 V
R
L
= 300
Ω,
C
L
= 35 pF
V
g
= 6 V, R
g
= 0
Ω,
C
L
= 10 nF
Room
Hot
Room
Hot
Room
Room
175
95
250
400
125
140
250
315
125
140
Symbol
V
ANALOG
r
DS(on)
V+ = 10.8 V,
I
S
= - 10 mA, V
D
=
3
V, 8 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Full
Room
Full
40
Typ
c
A Suffix
- 55 to 125 °C
Min
d
Max
d
12
80
100
D Suffix
- 40 to 85 °C
Min
d
Max
d
12
80
100
Unit
V
Ω
ns
25
25
pC
Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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