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SGT8810

Description
N-Channel Enhancement Mode Power Mos.FET
File Size576KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SGT8810 Overview

N-Channel Enhancement Mode Power Mos.FET

SGT8810
Elektronische Bauelemente
7A,
20V,R
DS(ON)
20m
N-Channel Enhancement Mode Power Mos.FET
Description
The SGT8100 used advanced trench technology to provide
excellent on-resistance which is an extremely efficient and
cost-effective device. It also provides low gate charge and
operates with gate voltages as low as 1.8 V. Suitable usage
in load switch and/or PWM applications.
This device is ESD protected.
Features
* ESD Rating: 2 kV HBM
* Low on-resistance
* Capable of 1.8V gate drive
D1
D2
REF.
A
A1
b
c
Millimeter
Min.
-
0.05
0.19
0.09
2.90
Max.
1.20
0.15
0.30
0.20
3.10
REF.
E
E1
e
L
S
Millimeter
Min.
Max.
6.20
4.30
0.45
6.60
4.50
0.75
G1
G2
0.65 BSC
S1
S2
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1,2
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
20
±8
7.0
5.7
30
1
0.008
Unit
V
V
A
A
A
W
W/ C
o
o
3
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Ratings
125
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
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