BC846LT1 … BC850LT1
NPN Silicon Epitaxial Transistor
for switching and amplifier applications.
As complementary types the PNP transistors
BC856LT1...BC860LT1 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
=25
O
C)
Symbol
Collector Base Voltage
BC846
BC847,BC850
BC848,BC849
Collector Emitter Voltage
BC846
BC847,BC850
BC848,BC849
Emitter Base Voltage
BC846,BC847
BC848,BC849,BC850
Collector Current (DC)
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CBO
V
CBO
V
CEO
V
CEO
V
CEO
V
EBO
V
EBO
I
C
P
tot
T
J
T
S
Value
80
50
30
65
45
30
6
5
100
310
150
-65 + to 150
Units
V
V
V
V
V
V
V
V
mA
mW
o
C
C
O
G S P FORM A IS AVAILABLE
BC846LT1 … BC850LT1
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=5V, I
C
=2mA
A
B
C
Collector Emitter Saturation Voltage
at I
C
=10mA, I
B
=0.5mA
at I
C
=100mA, I
B
=5mA
Base Emitter On Voltage
at I
C
=2mA, V
CE
=5V
at I
C
=10mA, V
CE
=5V
Base Emitter Saturation Voltage
at I
C
=10mA, I
B
=0.5mA
at I
C
=100mA, I
B
=5mA
Collector Cutoff Current
at V
CB
=30V
Current Gain Bandwidth Product
at V
CE
=5V, I
C
=10mA, f=100MHz
Output Capacitance
at V
CB
=10V, f=1MHz
Input Capacitance
at V
EB
=0.5V, f=1MHz
Noise Figure
at I
C
=200µA,V
CE
=5V,
R
G
=2kΩ, f=1kHz
at I
C
=200µA,V
CE
=5V,
R
G
=2kΩ, f=30~15000Hz
BC846, BC847, BC848
BC849, BC850
BC849
BC850
NF
NF
NF
NF
-
-
-
-
2
1.2
1.4
1.4
10
4
4
3
dB
dB
dB
dB
C
ib
-
9
-
pF
C
ob
-
3.5
6
pF
f
T
-
300
-
MHz
I
CBO
-
-
15
nA
V
BEsat
V
BEsat
-
-
700
900
-
-
mV
mV
V
BE(on)
V
BE(on)
580
-
660
-
700
720
mV
mV
V
CEsat
V
CEsat
-
-
90
200
250
600
mV
mV
h
FE
h
FE
h
FE
110
200
420
-
-
-
220
450
800
-
-
-
Min.
Typ.
Max.
Units
G S P FORM A IS AVAILABLE
BC846LT1 … BC850LT1
STATIC CHARACTERISTIC
100
100
BASE-EMITTER ON VOLTAGE
I
C
(mA),COLLECTOR CURRENT
80
I
B
=300 A
I
B
=250 A
I
B
=200 A
I
B
=150 A
I
B
=100 A
I
C
(mA),COLLECTOR CURRENT
I
B
=400 A
I
B
=350 A
V
CE
=2V
10
60
40
1
20
I
B
=50 A
0
0.1
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
1.2
V
BE
(V),BASE-EMITTER VOLTAGE
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
10000
V
CE
=5V
f
T
(MHz), CURRENT GAIN-BANDWIDTH PRODUCT
DC CURRENT GAIN
CURRENT GAIN BANDWIDTH PRODUCT
1000
V
CE
=5V
h
FE
DC CURRENT GAIN
1000
100
100
10
10
1
10
100
1000
I
C
(mA),COLLECTOR CURRENT
1
0.1
1
10
100
I
C
(mA),COLLECTOR CURRENT
V
BE(sat)
,V
CE(sat)
,(V) SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10000
I
C
=10I
B
COLLECTOR OUTPUT CAPACITANCE
100
f=1MHz
1000
V
BE(sat)
Cob(pF), CAPACITANCE
100
1000
10
100
1
V
CE(sat)
10
1
10
0.1
1
10
100
1000
I
C
(mA),COLLECTOR CURRENT
V
CB
(V),COLLECTOR-BASE VOLTAGE
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