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BC850BLT1

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size121KB,3 Pages
ManufacturerBytesonic Corporation
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BC850BLT1 Overview

Transistor

BC850BLT1 Parametric

Parameter NameAttribute value
MakerBytesonic Corporation
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.31 W
Maximum power dissipation(Abs)0.31 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
VCEsat-Max0.6 V
BC846LT1 … BC850LT1
NPN Silicon Epitaxial Transistor
for switching and amplifier applications.
As complementary types the PNP transistors
BC856LT1...BC860LT1 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
=25
O
C)
Symbol
Collector Base Voltage
BC846
BC847,BC850
BC848,BC849
Collector Emitter Voltage
BC846
BC847,BC850
BC848,BC849
Emitter Base Voltage
BC846,BC847
BC848,BC849,BC850
Collector Current (DC)
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CBO
V
CBO
V
CEO
V
CEO
V
CEO
V
EBO
V
EBO
I
C
P
tot
T
J
T
S
Value
80
50
30
65
45
30
6
5
100
310
150
-65 + to 150
Units
V
V
V
V
V
V
V
V
mA
mW
o
C
C
O
G S P FORM A IS AVAILABLE

BC850BLT1 Related Products

BC850BLT1 BC849BLT1 BC849CLT1 BC850CLT1
Description Transistor Transistor Transistor Transistor
Maker Bytesonic Corporation Bytesonic Corporation Bytesonic Corporation Bytesonic Corporation
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 6 pF 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 45 V 30 V 30 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 200 420 420
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 0.31 W 0.31 W 0.31 W 0.31 W
Maximum power dissipation(Abs) 0.31 W 0.31 W 0.31 W 0.31 W
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz 300 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V 0.6 V
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