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BUK854-500IS

Description
Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size319KB,5 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric View All

BUK854-500IS Overview

Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel,

BUK854-500IS Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)15 A
Collector-emitter maximum voltage500 V
Maximum landing time (tf)6000 ns
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage30 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)85 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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