BUZ11AL-E3045 datasheet, PDF - EEWORLD Datasheet

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BUZ11AL-E3045: DescriptionPower Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size154KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ11AL-E3045 Overview

Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BUZ11AL-E3045 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	14 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	26 A
Maximum drain-source on-resistance	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	104 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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BUZ11AL-E3045 Related Products

	BUZ11AL-E3045	BUZ11AL-E3044	BUZ11AL-E3046
Description	Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Maker	Infineon	Infineon	Infineon
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	14 mJ	14 mJ	14 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V
Maximum drain current (ID)	26 A	26 A	26 A
Maximum drain-source on-resistance	0.055 Ω	0.055 Ω	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G3	R-PSIP-T3
Number of components	1	1	1
Number of terminals	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	104 A	104 A	104 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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