BD534/536/538
BD534/536/538
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD533, BD535 and BD537 respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD534
: BD536
: BD538
: BD534
: BD536
: BD538
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
-8
-1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
Parameter
Collector Cut-off Current
: BD534
: BD536
: BD538
: BD534
: BD536
: BD538
Test Condition
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= -2 V, I
C
= - 500mA
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 2V, I
C
= - 2A
40
20
15
25
15
30
15
40
20
- 0.8
- 1.5
3
12
75
100
- 0.8
V
V
V
MHz
Min.
Typ.
Max.
- 100
- 100
- 100
- 100
- 100
- 100
-1
Units
µA
µA
µA
µA
µA
µA
mA
I
CES
Collector Cut-off Current
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
: ALL DEVICE
: ALL DEVICE
h
FE
h
FE
Groups
J
K
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
V
CE
= -2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 6A, I
B
= - 0.6A
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 500mA
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD534/536/538
Typical Characteristics
V
BE
(sat)[V], V
CE
(sat)[V], SATURATION VOLTAGE
1000
V
CE
= -2V
I
C
= 10 I
B
-1
V
BE
(sat)
h
FE
, DC CURRENT GAIN
100
-0.1
V
CE
(sat)
10
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-100
80
70
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-1000
60
-10
I
C
(max)
10
m
10
µ
s
50
1m
s
s
100
µ
s
DC
40
30
-1
20
BD534
BD536
BD538
-0.1
-1
-10
-100
10
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Preliminary
No Identification Needed
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Obsolete
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©2000 Fairchild Semiconductor International
Rev. E
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