BD534/536/538
BD534/536/538
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD533, BD535 and BD537 respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD534
: BD536
: BD538
: BD534
: BD536
: BD538
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
-8
-1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
Parameter
Collector Cut-off Current
: BD534
: BD536
: BD538
: BD534
: BD536
: BD538
Test Condition
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= -2 V, I
C
= - 500mA
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 2V, I
C
= - 2A
40
20
15
25
15
30
15
40
20
- 0.8
- 1.5
3
12
75
100
- 0.8
V
V
V
MHz
Min.
Typ.
Max.
- 100
- 100
- 100
- 100
- 100
- 100
-1
Units
µA
µA
µA
µA
µA
µA
mA
I
CES
Collector Cut-off Current
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
: ALL DEVICE
: ALL DEVICE
h
FE
h
FE
Groups
J
K
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
V
CE
= -2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 6A, I
B
= - 0.6A
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 500mA
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD534/536/538
Typical Characteristics
V
BE
(sat)[V], V
CE
(sat)[V], SATURATION VOLTAGE
1000
V
CE
= -2V
I
C
= 10 I
B
-1
V
BE
(sat)
h
FE
, DC CURRENT GAIN
100
-0.1
V
CE
(sat)
10
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-100
80
70
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-1000
60
-10
I
C
(max)
10
m
10
µ
s
50
1m
s
s
100
µ
s
DC
40
30
-1
20
BD534
BD536
BD538
-0.1
-1
-10
-100
10
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
Real-time operating system RTOS
京公网安备 11010802033920号
EEWORLD
