BC337 / BC338
Vishay Semiconductors
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially
suited for AF-driver stages and low power output
stages.
• These types are also available subdivided into
three groups - 16, - 25, and - 40, according to their
DC current gain. As complementary types, the
PNP transistors BC327 and BC328 are recom-
mended.
C 1
2
B
1
18855_1
2
3
E 3
Mechanical Data
Case:
TO-92 Plastic case
Weight:
approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
BC337-16
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
Type differentiation
h
FE
, 160 @ 100 mA
h
FE
, 250 @ 100 mA
h
FE
, 400 @ 100 mA
h
FE
, 130 @ 300 mA
h
FE
, 200 @ 300 mA
h
FE
, 320 @ 300 mA
Ordering code
BC337-16-BULK or BC337-16-TAP
BC337-25-BULK or BC337-25-TAP
BC337-40-BULK or BC337-40-TAP
BC338-16-BULK or BC338-16-TAP
BC338-25-BULK or BC338-25-TAP
BC338-40-BULK or BC338-40-TAP
Remarks
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - emitter voltage
Test condition
Part
BC337
BC338
BC337
BC338
Emitter - base voltage
Collector current
Collector peak current
Base current
Power dissipation
1)
Symbol
V
CES
V
CES
V
CEO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
50
30
45
25
5
800
1
100
625
1)
Unit
V
V
V
V
V
mA
A
mA
mW
T
amb
= 25 ° C
P
tot
Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Document Number 85112
Rev. 1.2, 02-Nov-04
www.vishay.com
1
BC337 / BC338
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
Rθ
JA
T
j
T
S
Value
200
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Electrical DC Characteristics
Parameter
DC current gain
(current gain group - 16)
DC current gain
(current gain group - 25)
DC current gain
(current gain group - 40)
DC current gain
(current gain group - 16)
DC current gain
(current gain group - 25)
DC current gain
(current gain group - 40)
Collector-emitter cut-off current
Test condition
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 300 mA
V
CE
= 1 V, I
C
= 300 mA
V
CE
= 1 V, I
C
= 300 mA
V
CE
= 45 V
V
CE
= 25 V
V
CE
= 45 V, T
amb
= 125 °C
V
CE
= 25 V, T
amb
= 125 °C
Collector - emitter breakdown
voltage
I
C
= 10 mA
Part
BC337-16
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
BC337
BC338
BC337
BC338
BC337
BC338
I
C
= 0.1 mA
Emitter - base breakdown
voltage
Collector saturation voltage
Base - emitter voltage
I
E
= 0.1 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 1 V, I
C
= 300 mA
BC337
BC338
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
I
CES
I
CES
I
CES
I
CES
V
(BR)CEO
V
(BR)CEO
V
(BR)CES
V
(BR)CES
V
(BR)EBO
V
CEsat
V
BE
45
20
50
30
5
0.7
1.2
Min
100
160
250
60
100
170
Typ
160
250
400
130
200
320
2
2
100
100
10
10
nA
nA
µA
µA
V
V
V
V
V
V
V
Max
250
400
630
Unit
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Test condition
V
CE
= 5 V, I
C
= 10 mA,
f = 50 MHz
V
CB
= 10 V, f = 1 MHz
Symbol
f
T
C
CBO
Min
Typ
100
12
Max
Unit
MHz
pF
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2
Document Number 85112
Rev. 1.2, 02-Nov-04
VISHAY
BC337 / BC338
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
P
tot
- Admissible Power Dissipation ( W )
V
CEsat
- Collector Saturation Voltage ( V )
1
0.8
0.5
0.4
I
C
0.3
0.2
I
B
typical
limits
at T
amb
= 25° C
= 10
0.6
0.4
0.2
0
0
20 40 60 80 100 120 140 160180 200
T
amb
- Ambient Temperature (
°C
)
0.1
0
0.1
150° C
25° C
- 50° C
18845
18848
10
100
I
C
- Collector Current ( mA )
1
1000
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Collector Saturation Voltage vs. Collector Current
1000
I
C
- Collector Current ( mA )
100
150° C
typical
limits
at T
amb
= 25° C
f
T
- Gain-Bandwidth Product ( MHz )
25° C
-50° C
1000
T
amb
= 25
°
f = 20 MHz
V
CE
= 5 V
1V
10
100
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
18846
10
1
18849
V
BE
- Base-Emitter Voltage ( V )
10
100
I
C
- Collector Current ( mA )
1000
Figure 2. Collector Current vs. Base-Emitter Voltage
Figure 5. Gain-Bandwidth Product vs. Collector Current
r
thA
- Pulse Thermal Resistance (
°
C / W)
10
3
1000
150° C
10
2
0.5
0.2
0.1
10 0.05
0.02
1
0.01
0.005
t
p
h
FE
- DC Current Gain
100
T
amb
= 25
°
C
- 50° C
18847
T
10
-1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
- Pulse Length ( s )
½
= 0
½
= t
p
/T
P
I
V
CE
= 1 V
10 10
2
18850
10
0.1
10
100
I
C
- Collector Current ( mA )
1
1000
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. DC Current Gain vs. Collector Current
Document Number 85112
Rev. 1.2, 02-Nov-04
www.vishay.com
3
BC337 / BC338
Vishay Semiconductors
VISHAY
V
BEsat
- Base Saturation Voltage ( V )
2
I
C
- Collector Current ( mA )
typical
limits
at T
amb
= 25° C
I
C
I
B
= 10
500
400
300
0.9
0.85
1
0.8
- 50° C
25° C
150° C
200
0.75
100
V
BE
= 0.7 V
0
18854
0
0.1
18851
1
10
100
I
C
- Collector Current ( mA )
1000
0
0.4
0.8
1.2
1.6
2
V
CE
- Collector Emitter Voltage ( V )
Figure 7. Base Saturation Voltage vs. Collector Current
Figure 10. Collector Current vs. Collector Emitter Voltage
100
I
C
- Collector Current ( mA )
0.35
0.3
0.25
80
60
40
0.2
0.15
0.1
20
0
18852
I
B
= 0.05 mA
0
2
4
6
8 10 12 14 16 18 20
V
CE
- Collector Emitter Voltage ( V )
Figure 8. Collector Current vs. Collector Emitter Voltage
500
I
C
- Collector Current ( mA )
3.2
2.8
2.4
2
400
300
200
100
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
18853
I
B
= 0.2 mA
0
0.4
0.8
1.2
1.6
2
V
CE
- Collector Emitter Voltage ( V )
Figure 9. Collector Current vs. Collector Emitter Voltage
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Document Number 85112
Rev. 1.2, 02-Nov-04
VISHAY
Packaging for Radial Taping
Dimensions in mm
BC337 / BC338
Vishay Semiconductors
±1
12.7
±1
±2
0.3
± 0.2
12 ±
0.3
±1
-0.5
9
± 0.5
"H"
Vers. Dim. "H"
FSZ
27 ± 0.5
18
4
± 0.2
5.08
± 0.7
2.54
6.3
± 0.7
12.7
± 0.2
Measure limit over 20 index - holes: ± 1
+ 0.6
- 0.1
0.9 max
18787
Document Number 85112
Rev. 1.2, 02-Nov-04
www.vishay.com
5
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