LH1262CB/CAC/CACTR
Dual Photovoltaic MOSFET Driver
Solid State Relay
FEATURES
•
•
•
•
•
High Open Circuit Voltage
High Short Circuit Current
High I/O Isolation Voltage
Logic Compatible Input
High Reliability
Package Dimensions in Inches (mm)
DIP
pin one ID
8
7
6
5
4
.268 (6.81)
.255 (6.48)
5
3
2
1
6
7
8
1
2
3
4
AGENCY APPROVALS
•
•
•
•
UL – File No. E52744
BSI/BABT Cert. No. 7980
VDE 0884 Approval
FIMKO Approval
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (0.76)
4° typ.
.150 (3.81)
.130 (3.30)
.050 (1.27)
.022 (.56)
.018 (.46)
.035 (.89)
.020 (.51)
.100 (2.54) typ.
10°
3°–9°
.012 (.30)
.008 (.20)
.130 (3.30)
.110 (2.79)
.250 (6.35)
.230 (5.84)
.031 (0.79)
.300 (7.62)
typ.
APPLICATIONS
•
•
•
•
•
•
•
•
High-side Driver
Solid State Relays
Floating Power Supply
Power Control
Data Acquisition
ATE
Isolated Switching
See Appnote 56
SMD
Pin one I.D.
+ Control 1
.268 (6.81)
.255 (6.48)
– Output 1
+ Output 1
– Output 2
+ Output 2
– Control 1
+ Control 2
– Control 2
DESCRIPTION
The LH1262CB/CAC Photovoltaic MOSFET Driver con-
sists of two LEDs optically coupled to two photodiode
arrays. The photodiode array provides a floating source
with adequate voltage and current to drive high-power
MOSFET transistors. Optical coupling provides a high I/
O Isolation voltage. In order to turn the MOSFET off, an
external resistance (gate-to-source) is required for gate
discharge.
.390 (9.91)
.379 (9.63)
.031 (.79)
typ.
.150 (3.81)
.130 (3.30)
.395 (10.03)
.375 (9.52)
.312 (7.80)
.298 (7.52)
.045 (1.14)
.030 (0.78)
Radius
3
°
to 7
°
4°
typ.
.050
(1.27)
typ.
.008 (.25)
.004 (.10) .040 (1.02)
.020 (.51)
.100 (2.54)
typ.
10°
.315
(8.00)
typ.
.010
(2.54)
typ.
Part Identification
Part Number
LH1262CB
LH1262CAC
LH1262CACTR
Description
8-pin DIP, Tubes
8-pin SMD, Tubes
8-pin SMD, Tape and Reel
Document Number: 83802
Revision: 07-February-02
www.vishay.com
3–27
Absolute Maximum Ratings,
T
A
=25
°
C (except where noted)
Stresses in excess of the absolute Maximum Ratings can cause permanent
damage to the device. These are absolute stress ratings only. Functional opera-
tion of the device is not implied at these or any other conditions in excess of
those given in the operational sections of this document. Exposure to absolute
Maximum Ratings for extended periods of time can adversely affect reliability.
Ambient OperatingTemperature Range (
T
A
) ..............–40
°
C to +100
°
C
Storage Temperature Range (
T
stg
) ............................–40
°
C to +150
°
C
Pin Soldering Time (t=7.0 s max.) (
T
S
) ........................................ 270
°
C
Input/Output Isolation Voltage
(t=60 s min.) (
V
ISO
) ..........................................................5300 V
RMS
LED Input Ratings
Continuous Forward Current (
I
F
)..............................................50 mA
Reverse Voltage (
I
R
≤
10
µ
A) t(
V
R
) .............................................. 5.0 V
Photodiode Array Reverse Voltage
(
I
R
≤
2.0
µ
A) t(
V
R
)........................................................................ 100 V
Electrical Characteristics,
T
A
=25
°
C
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of
engineering evaluations. Typical values are for information only and not part of the testing requirements.
Parameter
LED Forward Voltage
Detector Forward Voltage
Detector Reverse Voltage
Open circuit Voltage
(pins 5,6 or 7,8)
Symbol
Min.
1.15
—
—
10
—
—
1.0
2.6
—
—
—
Typ.
1.26
14
200
13.5
14
14.5
4.0
8
17
35
90
Max.
1.45
—
—
15
—
—
6.5
14
—
—
—
Unit
V
V
V
V
V
V
Condition
V
F
V
F
(PDA)
V
R
(PDA)
V
OC
V
OC
V
OC
I
SC
I
SC
I
SC
t
on
t
off
I
F
=10 mA
I
F
=10
µ
A
I
R
=2.0
µ
A
I
F
=5.0 mA
I
F
=10 mA
I
F
=20 mA
I
F
=5.0 mA
I
F
=10 mA
I
F
=20 mA
I
F
=20 mA*
I
F
=20 mA*
Short circuit Current
(pins 5,6 or 7,8)
µ
A
µ
A
µ
A
µ
s
µ
s
Turn-On Time
Turn-Off Time
Notes
* f=1.0 kHz, pulse width=100
µ
s, load (
R
L
)=1.0 M
Ω
, 15 pF; measured at 90% rated voltage (
t
on), 10% rated voltage (
t
off). Actuation speed
depends upon the external
t
on
and
t
off
circuitry and the gate capacitance of the MOSFET.
Functional Description
Figure 1 outlines the IV characteristics of the illuminated photo-
diode array (PDA). For operation at voltages below
V
OC
, the
PDA acts as a nearly constant current source. The actual
region of operation depends upon the load.
The amount of current applied to the LED (pins 1 and 2 or 3 and
4) determines the amount of light produced for the PDA. For
high temperature operation, more LED current may be required.
Figure 1. Typical PDA ON Characteristics
+I
17
µA
Short Circuit Current (I
sc
)
I
F
=20 mA
8
µA
4
µA
I
F
=10 mA
I
F
=5.0 mA
Open Circuit Voltage (V
OC
)
10 13.5 14 14.5 +V
Document Number: 83802
Revision: 07-February-02
www.vishay.com
3–28
Typical Performance Characteristics
Figure 2. Output Voltage vs. LED Forward Current
16
Short-cirucuit Current (µA)
14
Output Voltage (V)
12
10
8
6
4
2
0
0
4
8
12
16
20
LED Forward Current (mA)
R
L
=
R
L
=10 MΩ
R
L
=5.1 MΩ
R
L
=2.2 MΩ
R
L
=1.0 MΩ
Figure 5. Short Circuit Current vs. Temperature
25
20
15
10
5
0
–40
I
F
=10 mA
I
F
=5.0 mA
I
F
=20 mA
–20
0
20
40
60
Ambient Temperature (°C)
80
100
Figure 3. Short Circuit Current vs. LED Forward Current
20
Short Circuit Current (µA)
16
12
8
4
0
Figure 6. LED Forward Voltage vs. Temperature
1.6
1.5
LED Forward Voltage (V)
I
F
=50 mA
1.4
1.3
1.2
I
F
=2.0 mA
1.1
I
F
=5.0 mA
1.0
–40
I
F
=10 mA
I
F
=20 mA
0
4
8
12
16
LED Forward Current (mA)
20
–20
0
20
40
60
80
Ambient Temperature (°C)
Figure 4. Open Circuit Voltage vs. Temperature
17
16
Open-circuit Voltage (V)
15
14
13
12
11
10
0
-40
I
F
=20 mA
I
F
=10 mA
I
F
=5.0 mA
Figure 7.
t
on
/
t
off
vs. Load Capacitance
104
I
F=20 mA
Response Time (µs)
103
t
on
t
on
t
off
102
t
off
R
L
=2.2 MΩ
R
L
=1.0 MΩ
101
-20
0
20
40
60
Ambient Temperature (°C)
80
100
10
100
Load Capacitance (pF)
1000
Document Number: 83802
Revision: 07-February-02
www.vishay.com
3–29
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