BS107A
Small Signal MOSFET
250 mAmps, 200 Volts
N−Channel TO−92
Features
http://onsemi.com
•
AEC Qualified
•
PPAP Capable
•
This is a Pb−Free Device*
250 mAMPS, 200 VOLTS
R
DS(on)
= 6.4
W
D
N−Channel
MAXIMUM RATINGS
Rating
Drain
−Source
Voltage
Gate−Source Voltage
−
Continuous
−
Non−repetitive (t
p
≤
50
ms)
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
DS
V
GS
V
GSM
I
D
Value
200
±
20
±
30
250
500
350
−55
to
150
mW
°C
1
2
3
Unit
Vdc
Vdc
Vpk
mAdc
I
DM
P
D
T
J
, T
stg
G
S
MARKING
DIAGRAM
A
BS107A
YWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
TO−92
CASE 29−11
STYLE 30
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BS107ARL1G
Package
TO−92
(Pb−Free)
Shipping
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 6
1
Publication Order Number:
BS107/D
BS107A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V
DS
= 130 Vdc, V
GS
= 0)
Drain−Source Breakdown Voltage (V
GS
= 0, I
D
= 100
mAdc)
Gate Reverse Current (V
GS
= 15 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (I
D
= 1.0 mAdc, V
DS
= V
GS
)
Static Drain−Source On Resistance
BS107 (V
GS
= 2.6 Vdc, I
D
= 20 mAdc)
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
BS107A (V
GS
= 10 Vdc)
(I
D
= 100 mAdc)
(I
D
= 250 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 250 mAdc)
SWITCHING CHARACTERISTICS
Turn−On Time
Turn−Off Time
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
t
on
t
off
−
−
6.0
12
15
15
ns
ns
C
iss
C
rss
C
oss
g
fs
−
−
−
200
60
6.0
30
400
−
−
−
−
pF
pF
pF
mmhos
V
GS(Th)
r
DS(on)
1.0
−
−
−
−
−
−
−
4.5
4.8
3.0
28
14
6.0
6.4
Vdc
W
I
DSS
V
(BR)DSX
I
GSS
−
200
−
−
−
0.01
30
−
10
nAdc
Vdc
nAdc
Symbol
Min
Typ
Max
Unit
RESISTIVE SWITCHING
+25 V
23
PULSE GENERATOR
V
in
40 pF
50
50
1M
20 dB
50
W
ATTENUAT
OR
TO SAMPLING SCOPE
50
W
INPUT
V
out
t
on
90%
t
off
90%
10%
90%
50%
10%
PULSE WIDTH
50%
OUTPUT V
out
INVERTED
10 V
INPUT V
in
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
http://onsemi.com
2
BS107A
10
VDS , DRAIN-SOURCE VOLTAGE (VOLTS)
200
180
5.0
250 mA
C, CAPACITANCE (pF)
V
GS
= 10 V
2.0
1.0
100 mA
0.5
0.2
0.1
-55
160
140
120
100
80
60
40
20
-35
-15
85 105
65
+5.0 25
45
T
J
, JUNCTION TEMPERATURE (°C)
125
145
0
0
C
rss
40
10
20
30
V
DS
, DRAIN - SOURCE VOLTAGE (VOLTS)
C
oss
50
C
iss
V
GS
= 0 V
Figure 3. On Voltage versus Temperature
Figure 4. Capacitance Variation
0.8
ID(on) , DRAIN CURRENT (AMPS)
V
GS
= 10 V
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1.0
5.0 6.0 7.0 8.0
2.0 3.0 4.0
V
GS
, GATE - SOURCE VOLTAGE (VOLTS)
9.0
10
I D(on) , DRAIN CURRENT (AMPS)
0.7
0.7
10 V
0.6
0.5
0.4
0.3
0.2
0.1
0
2.0
10
4.0
6.0 8.0
12
14
16
V
DS
, DRAIN - SOURCE VOLTAGE (VOLTS)
3.0 V
18
20
4.0 V
5.0 V
Figure 5. Transfer Characteristic
Figure 6. Output Characteristic
0.7
ID(on), DRAIN CURRENT (AMPS)
0.6
0.5
0.4
0.3
0.2
0.1
1.0
2.0
3.0
4.0
3.0 V
5.0
4.0 V
10 V
5.0 V
V
DS
, DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 7. Saturation Characteristic
http://onsemi.com
3
BS107A
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
ON Semiconductor
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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4
BS107/D
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