B80C1000G datasheet, PDF - EEWORLD Datasheet

B80C1000G: DescriptionBridge Rectifier Diode, 1.2A, 125V V(RRM),; CategoryDiscrete semiconductor diode; File Size98KB，1 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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B80C1000G Overview

Bridge Rectifier Diode, 1.2A, 125V V(RRM),

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	45 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	1.2 A
Maximum repetitive peak reverse voltage	125 V
surface mount	NO

	B80C1000G	B125C1500RG	2W08G
Description	Bridge Rectifier Diode, 1.2A, 125V V(RRM),	Bridge Rectifier Diode, 1.5A, 300V V(RRM),	Bridge Rectifier Diode, 2A, 800V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compliant	compliant	compli
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V
Maximum non-repetitive peak forward current	45 A	30 A	50 A
Number of components	4	4	4
Maximum output current	1.2 A	1.5 A	2 A
Maximum repetitive peak reverse voltage	125 V	300 V	800 V
surface mount	NO	NO	NO
ECCN code	EAR99	EAR99	-
Maximum operating temperature	125 °C	-	150 °C

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