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BUH50AJ

Description
4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size182KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUH50AJ Overview

4A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

BUH50AJ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
BUH50G
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH50G has an application specific state−of−art die designed
for use in 50 W HALOGEN electronic transformers and
SWITCHMODE applications.
Features
http://onsemi.com
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproductible Parametric Distributions
Specified Dynamic Saturation Data
Full Characterization at 125°C
These Devices are Pb−Free and are RoHS Compliant*
POWER TRANSISTOR
4 AMPERES
800 VOLTS, 50 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Collector Current
Base Current
Base Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
500
800
800
9
4
8
2
4
50
0.4
−65
to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
W
W/_C
_C
1
2
3
4
TO−220AB
CASE 221A−09
STYLE 1
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
BUH50G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.5
62.5
260
Unit
_C/W
_C/W
_C
BUH50
A
Y
WW
G
1
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
BUH50G
August, 2013
Rev. 7
1
Publication Order Number:
BUH50/D
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