Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1204 & SHF1204SMS
thru
SHF1209 & SHF1209SMS
2 AMP
400 - 900 V
Hyper Fast Rectifier
Features:
•
•
•
•
•
•
•
Hyper Fast Recovery: 40 nsec maximum
PIV to 900 Volts, Consult Factory
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Replaces UES1204, UES1206
TX, TXV, S Level screening Available
2/
DESIGNER’S DATA SHEET
SHF12
__
│
│
│
│
│
│
│
│
└
__
│
│
│
│
│
└
__
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
Family/Voltage
04 = 400 V
06 = 600 V
08 = 800 V
09 = 900 V
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, T
A
= 25
°C
)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
°C
)
Operating & Storage Temperature
Maximum Thermal Resistance
SHF1204
SHF1206
SHF1208
SHF1209
V
RRM
V
RSM
V
R
Io
I
FSM
T
OP
& T
STG
400
600
800
900
2.0
20
-65 to +175
35
28
Volts
Amps
Amps
ºC
ºC/W
SMS
Junction to Leads, L = 3/8 "
Junction to Tabs
R
θJL
R
θJE
NOTES:
1/
For Ordering Information, Price, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
Axial Lead Diode
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0081G
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1204 & SHF1204SMS
thru
SHF1209 & SHF1209SMS
Symbol
Max
Units
Electrical Characteristic
Instantaneous Forward Voltage Drop
(I
F
= 1.2A
DC
, T
A
= 25ºC; pulsed)
Instantaneous Forward Voltage Drop
(I
F
= 2A
DC
, T
A
= 25ºC; pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC; pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC; pulsed)
Junction Capacitance
(V
R
=10V
DC
, T
A
=25ºC, f=1MHz)
Reverse Recovery Time
(I
F
= 500mA, I
R
= 1A, I
RR
= 250mA, T
A
= 25ºC)
(I
F
= 500mA, I
R
= 1A, I
RR
= 250mA, T
A
= 100ºC)
Case Outline:
(Axial)
V
F
V
F
1.7
1.9
10
1
22
40
80
DIM
A
B
C
D
MIN
0.100”
0.130”
0.027”
1.00”
V
DC
V
DC
µA
mA
pF
nsec
MAX
0.130”
0.180”
0.033”
--
I
R
I
R
C
J
t
RR
D
B
D
ØC
ØA
Case Outline:
(SMS)
B
A
DIM
A
B
C
D
A
MIN
0.127”
0.180”
0.020”
0.002”
MAX
0.140”
0.230”
0.030”
--
C
D
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0081G
NXP MCU
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