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BUL43BBD

Description
TRANSISTOR 2 A, 350 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size365KB,59 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUL43BBD Overview

TRANSISTOR 2 A, 350 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BUL43BBD Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)6
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)13 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BUL43B
Product Preview
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUL43B has an application specific state–of–the–art die designed for use in
220 V line operated Switchmode Power supplies and electronic ballast (“light
ballast”). The main advantages brought by this new transistor are:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast and Tightened Switching Distributions
— No Coil Required in Base Circuit for Fast Turn–Off (no current tail)
POWER TRANSISTORS
2 AMPERES
700 VOLTS
40 WATTS
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VCES
Value
350
650
650
9
2
4
1
2
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
VEBO
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
Base Current
— Peak (1)
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25°C
Operating and Storage Temperature
40
0.32
Watt
W/
_
C
TJ, Tstg
– 65 to 150
CASE 221A–06
TO–220AB
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
_
C/W
R
θJC
R
θJA
TL
3.125
62.5
260
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
3–304
Motorola Bipolar Power Transistor Device Data
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