9
&(
,
&
9
$
,*%7'LH
60;(
'LH VL]H [ PP
Doc. No. 5SYA1601-03 Aug 02
/RZ ORVV WKLQ ,*%7 GLH
+LJKO\ UXJJHG 137 GHVLJQ
/DUJH IURQW ERQGDEOH DUHD
(T
j
= 25°C, unless specified otherwise)
6\PERO
V
CES
I
C
I
CM
T
j
Limited by T
jmax
&RQGLWLRQV
9DOXHV
1200
25
50
-40 ... +150
8QLW
V
A
A
°C
0D[LPXP 5DWHG 9DOXHV
3DUDPHWHU
Collector-Emitter Voltage
DC Collector Current
Maximum Collector Current
Operating Temperature
&KDUDFWHULVWLF 9DOXHV
3DUDPHWHU
Collector-Emitter Saturation
Voltage
Collector-Emitter leakage
Current
Gate-Emitter leakage Current
Gate-Emitter Threshold Voltage
Turn-on delay time
Rise time
Turn-on switching energy
Turn-off delay time
Fall time
Turn-off switching energy
Internal gate resistance
Input capacitance
Total gate charge
6\PERO
V
CE(sat)
I
CES
I
GES
V
GE(TO)
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
Gint
C
ies
Q
ge
(T
j
= 25°C, unless specified otherwise)
&RQGLWLRQV
I
C
= 25 A,
V
GE
= 15 V
V
CE
= 1200 V,
V
GE
= 0 V
I
C
= 1 mA, V
CE
= V
GE
I
C
= 25 A, V
CC
= 600 V,
R
G
9
GE
=
±15
V,
T
j
= 125 °C, L
σ
= 50 nH,
Inductive load,
FWD : ½ 5SLX12E1200
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
4.5
90
70
3.5
480
60
3
10
Vce = 25 V, Vge = 0 V, f = 1 MHz
Vge = -15 .. +15 V
2
260
nF
nC
50
±200
6.5
PLQ W\S PD[
2.5
2.7
100
2.85
8QLW
V
V
µA
µA
nA
V
ns
ns
mJ
ns
ns
mJ
T
j
= 25 °C 2.1
V
CE
= 0 V, V
GE
=
±20
V
$%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH
60;(
0HFKDQLFDO &KDUDFWHULVWLFV
3DUDPHWHU
Overall die
Dimensions
LxW
6.6 x 6.5
5.1 x 5.0
1.2 x 1.2
180
±
20
AISi1
AI / Ti / Ni / Ag
4
1.2
Exposed
L x W (except gate pad)
Front metal
Gate pad
Thickness
Metallization
1)
8QLW
mm
mm
mm
µm
µm
µm
LxW
Front
Back
1)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02.
2XWOLQH 'UDZLQJ
Emitter
G
Note : all dimensions are shown in mm
Note : device is sensitive to electrostatic discharge
$%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH
$%% 6ZLW]HUODQG /WG
6HPLFRQGXFWRUV
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Doc. No. 5SYA1601-03 Aug 02
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
