SK22 THRU SK210
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· For surface mount applications
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals
CURRENT 2.0Amperes
VOLTAGE 20 to 100 Volts
DO-214AA (SMB)
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.008(0.203)
MAX.
0.220(5.59)
0.200(5.08)
Mechanical Data
· Case : JEDEC SMB(DO-214AA) molded plastic body
· Terminals : Solder Plate, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Weight : 0.003 ounce, 0.093 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current 0.375"(9.5mm) lead length(see Fig. 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 2.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
I
R
Rθ
JA
T
J
T
STG
V
RRM
V
RMS
V
DC
I(
AV
)
SK22
20
14
20
SK23
30
21
30
SK24
40
28
40
SK25
50
35
50
2.0
SK26
60
42
60
SK28
80
56
80
SK29 SK210 Units
90
63
90
100
70
100
Volts
Volts
Volts
Amps
I
FSM
50.0
Amps
V
F
0.55
0.70
1.0
20
75
-50 to +125
-65 to +150
0.85
Volts
mA
℃/W
℃
℃
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance junction to ambient
RATINGS AND CHARACTERISTIC CURVES SK22 THRU SK210
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
2.4
2.0
FIG.2-TYPICAL FORWARDCHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.6
1.2
0.8
0.4
0
20
40
60
80
100
120
140
160
180
200
25
SK
1
K2
-S
0
22
SK
4
K2
-S
SK
22
SK
25
3.0
1.0
AMBIENT TEMPERATURE (
o
C)
-S
K2
6
-S
K2
4
10
2
SK
10
K2
-S
8
Tj=25 C
Pulse Width 300 us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
40
.01
.1
.3
.5
.7
.9
1 .1
1. 3
1.5
30
Tj=25 C
8.3m s Single Half
Sine Wav e
JEDE C method
FORWARD VOLTAGE,(V)
20
FIG.5 - TYPICAL REVERSECHARACTERISTICS
10
100
0
1
5
10
50
100
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
REVERSE LEAKAGE CURRENT, (mA)
NUMBER OF CYCLES AT 60Hz
10
1.0
Tj=75 C
JUNCTION CAPACITANCE,(pF)
.1
Tj=25 C
.01
0
20
40
60
80
100
120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE(%)
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
Microchip MCU
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