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SKM100GB176D_09

Description
125 A, 1700 V, N-CHANNEL IGBT
Categorysemiconductor    Discrete semiconductor   
File Size800KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

SKM100GB176D_09 Overview

125 A, 1700 V, N-CHANNEL IGBT

SKM100GB176D_09 Parametric

Parameter NameAttribute value
Number of terminals7
Rated off time820 ns
Maximum collector current125 A
Maximum Collector-Emitter Voltage1700 V
Processing package descriptionCASE D 61, SEMITRANS 2, 7 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formUNSPECIFIED
terminal coatingtin/silver
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODES
Shell connectionisolation
Number of components2
transistor applicationsPOWER control
Transistor component materialssilicon
Channel typeN channel
Transistor typeINSULATED GATE BIPOLAR
Rated on time320 ns
SKM 100GB176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
2
Trench IGBT Modules
SKM 100GB176D
Inverse Diode
Module
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
1
06-10-2009 NOS
© by SEMIKRON

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