SKM 180A020
MOSFET,TRANSISTOR
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Inverse diode
SEMITRANS
TM
M1
Power MOSFET Modules
SKM 180A020
Characteristics
Symbol Conditions
min.
typ.
max.
Units
Features
Inverse diode
Typical Applications
Thermal characteristics
Mechanical data
MA
1
03-12-2008 NOS
© by SEMIKRON
SKM 180A020
MOSFET,TRANSISTOR
Fig. 1 Rated power disipation vs. temperature
Fig. 2 Maximum safe operating area
Fig. 3 Output characteristic
Fig. 4 Transfer characteristic
Fig. 5 On-resistance vs. temperature
Fig. 6 Rated current vs. temperature
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03-12-2008 NOS
© by SEMIKRON
SKM 180A020
MOSFET,TRANSISTOR
Fig. 7 Breakdown voltage vs. temperature
Fig. 8 Drain-source voltage derating
Fig. 9 Capacitances vs. drain-source voltage
Fig. 10 Gate charge characteristic
Fig. 14 Gate-source threshold voltage
3
03-12-2008 NOS
© by SEMIKRON
SKM 180A020
MOSFET,TRANSISTOR
UL Recognized
File no. E 63 532
Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
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03-12-2008 NOS
© by SEMIKRON
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