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SKM180A020_08

Description
180 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size442KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

SKM180A020_08 Overview

180 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET

SKM180A020_08 Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage200 V
Processing package descriptionCASE D 15, SEMITRANS M1, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formUNSPECIFIED
terminal coatingTIN/SILVER
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSINGLE WITH BUILT-IN DIODE
Shell connectionISOLATED
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current180 A
Maximum drain on-resistance0.0110 ohm
Maximum leakage current pulse540 A
SKM 180A020
MOSFET,TRANSISTOR
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Inverse diode
SEMITRANS
TM
M1
Power MOSFET Modules
SKM 180A020
Characteristics
Symbol Conditions
min.
typ.
max.
Units
Features
Inverse diode
Typical Applications
Thermal characteristics
Mechanical data
MA
1
03-12-2008 NOS
© by SEMIKRON

SKM180A020_08 Related Products

SKM180A020_08 SKM180A020
Description 180 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET 180 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 4 4
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Shell connection ISOLATED ISOLATED
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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