SKM300GAL063D datasheet, PDF - EEWORLD Datasheet

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SKM300GAL063D: Description400 A, 600 V, N-CHANNEL IGBT; CategoryDiscrete semiconductor The transistor; File Size673KB，6 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com; Environmental Compliance

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SKM300GAL063D Overview

400 A, 600 V, N-CHANNEL IGBT

SKM300GAL063D Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMIKRON
Parts packaging code	DO-204
package instruction	CASE D57, SEMITRANS3-7
Contacts	2
Manufacturer packaging code	CASE D57
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Maximum collector current (IC)	400 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X5
JESD-609 code	e2
Number of components	1
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1350 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver (Sn/Ag)
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	600 ns
Nominal on time (ton)	240 ns

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SKM 300GB063D

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Units

SEMITRANS

Superfast IGBT Modules

SKM 300GB063D

SKM 300GAR063D

SKM 300GAL063D

Freewheeling Diode

Inverse Diode

Features

Module

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Units

Typical Applications

GAL

GAR

03-12-2008 NOS

SKM300GAL063D Related Products

	SKM300GAL063D	SKM300GB063D	SKM300GB063D_08	SKM300GAR063D
Description	400 A, 600 V, N-CHANNEL IGBT	400 A, 600 V, N-CHANNEL IGBT	400 A, 600 V, N-CHANNEL IGBT	400 A, 600 V, N-CHANNEL IGBT
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Number of components	1	2	1	1
Number of terminals	5	7	5	5
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	Lead free	-	Lead free
Is it Rohs certified?	conform to	conform to	-	conform to
Maker	SEMIKRON	SEMIKRON	-	SEMIKRON
Parts packaging code	DO-204	DO-204	-	DO-204
package instruction	CASE D57, SEMITRANS3-7	CASE D56, SEMITRANS3-7	-	FLANGE MOUNT, R-XUFM-X5
Contacts	2	2	-	2
Manufacturer packaging code	CASE D57	CASE D56	-	CASE D58
Reach Compliance Code	compli	compli	-	compli
ECCN code	EAR99	EAR99	-	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	-	UL RECOGNIZED
Maximum collector current (IC)	400 A	400 A	-	400 A
Collector-emitter maximum voltage	600 V	600 V	-	600 V
Configuration	SINGLE WITH BUILT-IN DIODE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V	20 V	-	20 V
JESD-30 code	R-XUFM-X5	R-XUFM-X7	-	R-XUFM-X5
JESD-609 code	e2	e2	-	e2
Maximum operating temperature	150 °C	150 °C	-	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	-	N-CHANNEL
Maximum power dissipation(Abs)	1350 W	1350 W	-	1350 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified
surface mount	NO	NO	-	NO
Terminal surface	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)	-	Tin/Silver (Sn/Ag)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Nominal off time (toff)	600 ns	600 ns	-	600 ns
Nominal on time (ton)	240 ns	240 ns	-	240 ns

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