SKM 300GB063D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
3
Superfast IGBT Modules
SKM 300GB063D
SKM 300GAR063D
SKM 300GAL063D
Freewheeling Diode
Inverse Diode
Features
Module
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
GAL
GAR
1
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITRANS
®
3
Superfast IGBT Modules
SKM 300GB063D
SKM 300GAR063D
SKM 300GAL063D
Freewheeling Diode
Features
Module
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
GB
GAL
GAR
2
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Z
th
Symbol
Z
th(j-c)l
Conditions
Values
Units
SEMITRANS
®
3
Z
th(j-c)D
Superfast IGBT Modules
SKM 300GB063D
SKM 300GAR063D
SKM 300GAL063D
Features
Typical Applications
GB
GAL
GAR
3
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
03-12-2008 NOS
© by SEMIKRON
SKM 300GB063D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic, inclusive R
CC'+ EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
03-12-2008 NOS
© by SEMIKRON