CMUD6263EBK datasheet, PDF - EEWORLD Datasheet

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CMUD6263EBK: DescriptionRectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3; CategoryDiscrete semiconductor diode; File Size151KB，2 Pages; ManufacturerCentral Semiconductor

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CMUD6263EBK Overview

Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3

CMUD6263EBK Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
package instruction	R-PDSO-F3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.32 V
JESD-30 code	R-PDSO-F3
JESD-609 code	e0
Maximum non-repetitive peak forward current	0.1 A
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.07 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	70 V
Maximum reverse recovery time	0.005 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL

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CMUD6263E

CMUD6263AE

CMUD6263CE

CMUD6263SE

ENHANCED SPECIFICATION

SURFACE MOUNT ULTRAmini™

SILICON SCHOTTKY DIODES

Central

DESCRIPTION:

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR CMUD6263E

Series types are Enhanced High Voltage Silicon

Schottky diodes, epoxy molded in an ULTRAmini™

SOT-523 surface mount package, designed for low

current fast switching applications requiring a low

forward voltage drop.

ENHANCED SPECIFICATIONS:

♦

IF = 70mA (from 15mA)

SOT-523 CASE

MARKING CODE:

CMUD6263E

SINGLE

C63

CMUD6263AE

DUAL, COMMON ANODE

C6A

CMUD6263CE

DUAL, COMMON CATHODE

C6C

CMUD6263SE

DUAL, IN SERIES

C6S

♦

IFSM = 100mA (from 50mA)

MAXIMUM RATINGS:

(TA=25

Peak Repetitive Reverse Voltage

♦

Continuous Forward Current

♦

Forward Surge Current, tp=1.0 s

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VRRM

IFSM

TJ,Tstg

100

250

-65 to +150

500

UNITS

C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25

SYMBOL

♦

TEST CONDITIONS

VR=50V

IR=10μA

IF=100μA

IF=500μA

IF=1.0mA

IF=10mA

IF=15mA

VR=0V, f=1.0MHz

IR=IF=10mA, Irr=1mA, RL=100Ω

MIN

290

345

380

700

830

320

380

400

750

900

2.0

5.0

TYP

MAX

100

UNITS

♦♦

♦

♦♦

BVR

trr

♦

Enhanced specification.

♦♦

Additional Enhanced specification.

R1 (22-March 2006)

CMUD6263EBK Related Products

	CMUD6263EBK	CMUD6263AETR	CMUD6263AEBK	CMUD6263CEBK	CMUD6263CETR	CMUD6263ETR	CMUD6263SEBK	CMUD6263SETR
Description	Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3	Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3	Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-3
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	R-PDSO-F3	PLASTIC, ULTRAMINI-3	PLASTIC, ULTRAMINI-3	PLASTIC, ULTRAMINI-3	PLASTIC, ULTRAMINI-3	R-PDSO-F3	PLASTIC, ULTRAMINI-3	R-PDSO-F3
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	SINGLE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.32 V	0.32 V	0.32 V	0.32 V	0.32 V	0.32 V	0.32 V	0.32 V
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Number of components	1	2	2	2	2	1	2	2
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.07 A	0.07 A	0.07 A	0.07 A	0.07 A	0.07 A	0.07 A	0.07 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	70 V	70 V	70 V	70 V	70 V	70 V	70 V	70 V
Maximum reverse recovery time	0.005 µs	0.005 µs	0.005 µs	0.005 µs	0.005 µs	0.005 µs	0.005 µs	0.005 µs
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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