KM23C2100H-10 datasheet, PDF - EEWORLD Datasheet

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KM23C2100H-10: DescriptionMASK ROM, 256KX8, 100ns, CMOS, PDIP40, 0.600 INCH, PLASTIC, DIP-40; Categorystorage storage; File Size101KB，4 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM23C2100H-10 Overview

MASK ROM, 256KX8, 100ns, CMOS, PDIP40, 0.600 INCH, PLASTIC, DIP-40

KM23C2100H-10 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIP
package instruction	DIP, DIP40,.6
Contacts	40
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	100 ns
Spare memory width	16
JESD-30 code	R-PDIP-T40
JESD-609 code	e0
length	52.43 mm
memory density	2097152 bit
Memory IC Type	MASK ROM
memory width	8
Number of functions	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum standby current	0.00005 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

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KM23C2100H-10 Related Products

	KM23C2100H-10	KM23C2100HFP-12	KM23C2100H-12	KM23C2100H-15	KM23C2100HFP-10	KM23C2100HFP-15
Description	MASK ROM, 256KX8, 100ns, CMOS, PDIP40, 0.600 INCH, PLASTIC, DIP-40	MASK ROM, 256KX8, 120ns, CMOS, CQFP44, QFP-44	MASK ROM, 256KX8, 120ns, CMOS, PDIP40, 0.600 INCH, PLASTIC, DIP-40	MASK ROM, 256KX8, 150ns, CMOS, PDIP40, 0.600 INCH, PLASTIC, DIP-40	MASK ROM, 256KX8, 100ns, CMOS, CQFP44, QFP-44	MASK ROM, 256KX8, 150ns, CMOS, CQFP44, QFP-44
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	DIP	QFP	DIP	DIP	QFP	QFP
package instruction	DIP, DIP40,.6	WQFP, TQFP44,.6SQ,32	DIP, DIP40,.6	DIP, DIP40,.6	WQFP, TQFP44,.6SQ,32	WQFP, TQFP44,.6SQ,32
Contacts	40	44	40	40	44	44
Reach Compliance Code	compliant	compliant	compliant	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	100 ns	120 ns	120 ns	150 ns	100 ns	150 ns
Spare memory width	16	16	16	16	16	16
JESD-30 code	R-PDIP-T40	S-CQFP-G44	R-PDIP-T40	R-PDIP-T40	S-CQFP-G44	S-CQFP-G44
JESD-609 code	e0	e0	e0	e0	e0	e0
length	52.43 mm	10 mm	52.43 mm	52.43 mm	10 mm	10 mm
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bi	2097152 bi
Memory IC Type	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	40	44	40	40	44	44
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	WQFP	DIP	DIP	WQFP	WQFP
Encapsulate equivalent code	DIP40,.6	TQFP44,.6SQ,32	DIP40,.6	DIP40,.6	TQFP44,.6SQ,32	TQFP44,.6SQ,32
Package shape	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE
Package form	IN-LINE	FLATPACK, WINDOW	IN-LINE	IN-LINE	FLATPACK, WINDOW	FLATPACK, WINDOW
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	NO	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal pitch	2.54 mm	0.8 mm	2.54 mm	2.54 mm	0.8 mm	0.8 mm
Terminal location	DUAL	QUAD	DUAL	DUAL	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	15.24 mm	10 mm	15.24 mm	15.24 mm	10 mm	10 mm

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