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CTB24-800BPT

Description
TRIAC, 800V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size230KB,2 Pages
ManufacturerCynergy 3
Environmental Compliance
Download Datasheet Parametric View All

CTB24-800BPT Overview

TRIAC, 800V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN

CTB24-800BPT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCynergy 3
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value10 V/us
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current80 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current0.005 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current25 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
CTA/CTB 24
24Amp - 400/600/800/1000V - TRIAC
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
- Dishwashers
- Washing Machines
#
Suitable for General Purpose AC Switching
#
Altgernistor/No Snubber Versions for
Inductive Loads
#
Logic Level Available for Use with
Microcontrollers and Low Level Devices
#
IGT Range 35-50 mA (Q1)
#
V
DRM
/V
RMM
400, 600, 800, 1000V
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25˚C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
=2 x I
GT
, tr<100 ns, Tj = 125˚C
Peak Gate Current @ Tj = 125˚C
Tc = 100˚C
Tc = 75˚C
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
tp = 20 µs
SYMBOL
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
Tstg
Tj
V
ISO
RATING
25A
250A
260A
340A
2
s
100A/µs
4A
1W
-40 to +150˚C
-40 to +125˚C
2500 V
RMS
A1
A2
G
Average Gate Power Dissipation @ Tj = 125˚C
Storage Temperature Range
Operating Junction Temperature Range
Isolation Voltage (CTA Series only)
A2
TO-220AB Isolated
(CTA24)
Electrical Characteristics
ALTERNISTOR/NO SNUBBER AND LOGIC LEVEL (3 Quadrants)
A1
A2
CW
QI-II-III
QI-II-III
35mA
1.3V
0.2V
50mA
QI-III
Q-II
50mA
80mA
500V/µs
13A/ms
BW
50mA
1.3V
0.2V
75mA
70mA
100mA
1000V/µs
22A/ms
B
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
G
NOTE 1
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
A2
TO-220AB Non-Isolated
(CTB24)
Tj = 125˚C
QI-II-III
NOTE 2
dv/dt MIN @ V
D
= 67%V
DRM
(gate open)
NOTE 2
(di/dt)c MIN without Snubber
NOTE 2 & 4
Tj = 125˚C
Tj = 125˚C
G
A1
STANDARD (4 Quadrants)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
dv/dt MIN @ V
D
= 67%V
DRM
(gate open)
NOTE 2
(dv/dt)c MIN @ (di/dt)c = 13.3 A/ms
NOTE 2
GENERAL NOTES
1.
2.
3.
4.
Minimum IGT is guaranted at 5% of IGT max.
For both polarities of A2 referenced to A1
All parameters at 25 degrees C unless otherwise specified.
Commutating dv/dt=50V.µsec (exponential to 200Vpk)
NOTE 2
QI-II-III
QIV
Q-All
Tj = 125˚C
Q-All
50mA
100mA
1.3V
0.2V
80mA
QI-III-IV
Q-II
Tj = 125˚C
Tj = 125˚C
70mA
160mA
500V/µs
10V/µs
ISO
9001
C E R T I F I E D
Competitive part number cross-reference available at:
www.cynergy3.com

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