HY51V64803HGLT-6 datasheet, PDF

HY51V64803HGLT-6: DescriptionEDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32; Categorystorage storage; File Size341KB，11 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY51V64803HGLT-6 Overview

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	TSOP2
package instruction	0.400 INCH, PLASTIC, TSOP2-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH
JESD-30 code	R-PDSO-G32
JESD-609 code	e6
length	20.95 mm
memory density	67108864 bit
Memory IC Type	EDO DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	10.16 mm

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