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HY62QF16200ALLF-85

Description
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48
Categorystorage    storage   
File Size144KB,8 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY62QF16200ALLF-85 Overview

Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48

HY62QF16200ALLF-85 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeBGA
package instructionFINE PITCH, BGA-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time85 ns
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length8 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.1 mm
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width7 mm
HY62QF16200A Series
128Kx16bit full CMOS SRAM
DESCRIPTION
The HY62QF16200A is a high speed, super low
power and 2Mbit full CMOS SRAM organized as
131,072 words by 16bits. The HY62QF16200A
uses high performance full CMOS process
technology and is designed for high speed and
low power circuit technology. It is particularly well-
suited for the high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
- 1.2V(min) data retention
Standard pin configuration
- 48-FBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62QF16200A
2.3V~2.7V 70/85/100
HY62QF16200A-I 2.3V~2.7V 70/85/100
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
10
2
10
2
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
/LB
/OE A0
A1
A4
A6
A7
A2
NC
A1,A2
A4,A6~A7
A9
A12
A15~A16
A8
ADD INPUT
BUFFER
BLOCK DIAGRAM
ROW
DECODER
SENSE
AMP
IO9 /UB A3
IO10 IO11 A5
Vss IO12 NC
Vcc IO13 NC
/CS IO1
IO2 IO3
IO4 Vcc
I/O1
COLUMN
DECODER
I/O8
DATA I/O
BUFFER
ADD INPUT
BUFFER
PRE DECODER
A16 IO5 Vss
A10
A13
A14
A0
A3
A5
A11
/CS
/OE
/LB
/UB
/WE
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
MEMORY ARRAY
128K x 16
WRITE DRIVER
I/O9
BLOCK
DECODER
ADD INPUT
BUFFER
I/O16
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Funtion
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A16
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(2.7V~3.3V)
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Jun. 2000
Hyundai Semiconductor
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