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MJE18009BA

Description
10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size512KB,66 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJE18009BA Overview

10A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE18009BA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)7
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Data Sheet
SWITCHMODE
NPN
Designer's
Silicon
Planar Power Transistor
The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light
ballast”). These high voltage/high speed transistors exhibit the following main
features:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125
_
C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Specified Dynamic Saturation Data
Two Package Choices: Standard TO–220 or Isolated TO–220
MJE18009
MJF18009
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCES
MJE18009
MJF18009
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Sustaining Voltage
450
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Voltage
1000
1000
9
VCBO
VEBO
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
10
20
4
8
*Total Device Dissipation @ TC = 25°C
*Derate above 25
_
C
Operating and Storage Temperature
RMS Isolation Voltage (2)
(1s, 25°C, Humidity
30%)
TC = 25°C
150
1.2
50
0.4
Watt
W/
_
C
TJ, Tstg
VISOL1
VISOL2
VISOL3
– 65 to 150
CASE 221A–06
TO–220AB
_
C
V
Per Figure 22
Per Figure 23
Per Figure 24
4500
3500
1500
THERMAL CHARACTERISTICS
Rating
Symbol
R
θJC
R
θJA
TL
MJE18009
0.83
62.5
MJF18009
2.5
62.5
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
_
C/W
_
C
260
CASE 221D–02
TO–220 FULLPACK
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
v
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
3–750
Motorola Bipolar Power Transistor Device Data
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