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Datasheet> All Categories > Discrete semiconductor> The transistor> MJE182
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MJE182

Description
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size179KB，3 Pages
ManufacturerMicro Commercial Components (MCC)
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MJE182 Overview

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

MJE182 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeSIP
package instructionTO-126, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

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MCC
Features
•
  omponents
21201 Itasca Street Chatsworth

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MJE172 PNP
MJE182 NPN
This device is designed for low power audio amplifier and low current,
high speed switching applications.
Silicon Power
Transistor
TO-126
A
K
D
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
T
J
T
STG
Symbol
P
D
P
D
R
J C
R
JA
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
P
eak
Base Current
Operating Junction Temperature
Storage Temperature
Rating
Total Device Dissipation
Derate above 25
O
C
Total Device Dissipation
Derate above 25
O
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Collector-Emitter Sustaining Voltage
(I
C
=10mAdc, I
E
=0)
Collector Cutoff Current
(V
CB
=100Vdc, I
E
=0)
(V
CB
=100Vdc, I
E
=0, T
C
=150
O
C)
Emitter Cutoff Current
(V
EB
=7.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
(I
C
=500mAdc, V
CE
=1.0Vdc)
(I
C
=1.5Adc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
(I
C
=1.5Adc, I
B
=150mAdc)
(I
C
=3.0Adc, I
B
=600mAdc)
Base-Emitter Saturation Voltage
(I
C
=1.5Adc, I
B
=150mAdc)
(I
C
=3.0Adc, I
B
=600mAdc)
Base-Emitter On Voltage
(I
C
=500mAdc, V
CE
=1.0Vdc)
Rating
80
100
7.0
3.0
6.0
1.0
-55 to +150
-55 to +150
Max
1.5
0.012
12.5
0.1
10
83.4
Min
Max
Unit
V
V
V
A
A
O
C
O
C
Unit
W
W/
O
C
W
W/
O
C
O
C/W
O
C/W
Units
1
2
J
3
J
Q
R
E
B
Thermal Characteristics
F
G
L
H
C
M
N
P
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
CEO(sus)
I
CBO
80
---
---
---
---
0.1
0.1
0.1
Vdc
uAdc
mAdc
uAdc
















!
 
















PIN 1.
PIN 2.
PIN 3.
EMITTER
COLLECTOR
BASE
I
E BO


























































 
ON CHARACTERISTICS
h
FE
50
30
12
---
---
---
---
---
---
250
---
---
0.3
0.9
1.7
1.5
2.0
1.2
---
V
CE(sat)
Vdc
V
BE(sat)
Vdc
Vdc
V
BE(on)
www.mccsemi.com

MJE182 Related Products

MJE182 MJE172-BP MJE182-BP
Description Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Is it Rohs certified? incompatible conform to conform to
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Parts packaging code SIP SIP SIP
package instruction TO-126, 3 PIN TO-126, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknown compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 3 A 3 A 3 A
Collector-emitter maximum voltage 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 12 12 12
JEDEC-95 code TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN PNP NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) MATTE TIN MATTE TIN
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz
Is it lead-free? - Lead free Lead free

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