BD139-10 datasheet, PDF - EEWORLD Datasheet

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BD139-10: DescriptionPower Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size341KB，2 Pages; ManufacturerCentral Semiconductor

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BD139-10 Overview

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD139-10 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SIP
package instruction	TO-126, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	12.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	190 MHz

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BD135

BD137

BD139

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD135, BD137,

and BD139 are silicon NPN epitaxial planar transistors

designed for audio amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current

IC

Peak Collector Current

ICM

Continuous Base Current

IB

Peak Base Current

IBM

Power Dissipation (Tmb<70°C)

PD

Power Dissipation (TA=25°C)

PD

Operating and Storage Junction Temperature

TJ, Tstg

Thermal Resistance

Θ

Jmb

Thermal Resistance

Θ

JA

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

fT

BD135

45

BD137

BD139

60

100

60

80

5.0

1.5

2.0

0.5

1.0

8.0

1.25

-65 to +150

10

100

UNITS

V

A

W

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

TYP

VCB=30V

VCB=30V (TC=125°C)

VEB=5.0V

IC=30mA (BD135)

45

IC=30mA (BD137)

60

IC=30mA (BD139)

80

IC=500mA, IB=50mA

VCE=2.0V, IC=500mA

VCE=2.0V, IC=5.0mA

40

VCE=2.0V, IC=150mA

63

VCE=2.0V, IC=500mA

25

VCE=5.0V, IC=50mA, f=100MHz

190

BD135-10

BD137-10

BD139-10

MIN

MAX

63

160

MAX

100

10

100

0.5

1.0

250

UNITS

nA

μA

nA

V

MHz

SYMBOL

hFE

TEST CONDITIONS

VCE=2.0V, IC=500mA

BD135-16

BD137-16

BD139-16

MIN

MAX

100

250

R4 (13-March 2014)

BD139-10 Related Products

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Description	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Surface Mount Quartz Crystal	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-	Contains lead	Lead free	Lead free
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	SIP	SIP	SIP	SIP	SIP	-	SIP	SIP	SIP
package instruction	TO-126, 3 PIN	TO-126, 3 PIN	TO-126, 3 PIN	TO-126, 3 PIN	TO-126, 3 PIN	-	TO-126, 3 PIN	TO-126, 3 PIN	TO-126, 3 PIN
Contacts	3	3	3	3	3	-	3	3	3
Reach Compliance Code	unknown	unknown	unknown	not_compliant	not_compliant	-	unknown	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	-	1.5 A	1.5 A	1.5 A
Collector-emitter maximum voltage	80 V	45 V	60 V	80 V	45 V	-	60 V	60 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	63	63	63	100	100	-	100	25	25
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126	TO-126	-	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0	e0	-	e0	e3	e3
Number of components	1	1	1	1	1	-	1	1	1
Number of terminals	3	3	3	3	3	-	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	-	150 °C	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	-	NPN	NPN	NPN
Maximum power dissipation(Abs)	12.5 W	12.5 W	12.5 W	12.5 W	12.5 W	-	12.5 W	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	-	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	190 MHz	190 MHz	190 MHz	190 MHz	190 MHz	-	190 MHz	190 MHz	190 MHz

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