KTC5103D-Y datasheet, PDF - EEWORLD Datasheet

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KTC5103D-Y: DescriptionSmall Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size732KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC5103D-Y Overview

Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3

KTC5103D-Y Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	3500 ns
Maximum opening time (tons)	1000 ns

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SEMICONDUCTOR

TECHNICAL DATA

LOW COLLECTOR SATURATION VOLTAGE

LARGE CURRENT

FEATURES

・

High Power Dissipation : P

C

=1.3W(Ta=25℃)

・

Complementary to KTA1385D

KTC5103D

EPITAXIAL PLANAR NPN TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

DC

Collector Current

Pulse *

Base Current

Collector Power

Dissipation

Junction Temperature

Storage Temperature Range

* PW≤10ms, Duty Cycle≤50%

Ta=25℃

P

C

Tc=25℃

T

j

T

stg

15

150

-55½150

℃

I

CP

I

B

8

1

1.0

W

A

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

RATING

60

7

5

A

UNIT

V

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

*

SYMBOL

I

CBO

I

EBO

h

FE

(1)

h

FE

(2) (Note)

h

FE

(3)

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage

Turn On Time

Switching

Time

Storage Time

Fall Time

* Pulse test : PW≤50μ

S,

Note) h

FE

(2) Classification :

*

V

CE(sat)

V

BE(sat)

t

on

t

stg

t

f

TEST CONDITION

V

CB

=50V, I

E

=0

V

EB

=7V, I

C

=0

V

CE

=1V, I

C

=0.1A

V

CE

=1V, I

C

=2A

V

CE

=2V, I

C

=5A

I

C

=2A, I

B

=0.2A

I

C

=2A, I

B

=0.2A

MIN.

-

60

160

50

-

TYP.

-

0.1

0.9

0.2

1.1

0.2

MAX.

10

-

400

-

0.3

1.2

1

2.5

1

μ

S

V

UNIT

μ

A

μ

A

Duty Cycle≤2% Pulse

O:160½320,

Y:200½400.

2013. 6. 26

Revision No : 4

1/3

KTC5103D-Y Related Products

	KTC5103D-Y	KTC5103D-O	KTC5103D-Y-RTF/P
Description	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3
Maker	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A	5 A
Collector-emitter maximum voltage	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	160	200
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1
Number of terminals	2	2	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	3500 ns	3500 ns	3500 ns
Maximum opening time (tons)	1000 ns	1000 ns	1000 ns
Contacts	3	3	-
Maximum operating temperature	150 °C	150 °C	-
Maximum power dissipation(Abs)	15 W	15 W	-
Certification status	Not Qualified	Not Qualified	-

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