http://www.fujisemi.com
YG858C15R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
FUJI Diode
Symbols
V
RRM
V
iso
Io
I
FSM
Tj
Tstg
Conditions
-
Terminals-to-case, AC.1min
50Hz Square wave duty =1/2
Tc = 61˚C
Sine wave, 10ms 1shot
-
-
Ratings
150
1500
30*
110
150
-40 to +150
Units
V
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage***
Reverse current***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
Rth(j-c)
I
F
=15 A
V
R
=V
RRM
Junction to case
Conditions
Maximum
1.13
200
2.0
Units
V
µA
˚C/W
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
-
Maximum
0.3 to 0.5
1.7
Units
N•m
g
1
YG858C15R
Outline Drawings [mm]
http://www.fujisemi.com
FUJI Diode
2
YG858C15R
Reverse Characteristic (typ.)
10
5
http://www.fujisemi.com
FUJI Diode
Forward Characteristic (typ.)
Tj=150°C
10
4
10
Tj=125°C
Tj=150°C
Tj=125°C
IF Forward Current (A)
10
3
Tj=100°C
Tj=25°C
1
IR Reverse Current (uA)
Tj=100°C
10
2
Tj=25°C
10
1
0.1
10
0
0.01
0.0
10
-1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150 160
VF Forward Voltage (V)
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
24
12
Reverse Power Dissipation (max.)
360°
22
360°
VR
10
DC
20
I
0
λ
α
18
16
Square wave
λ
=60°
Square wave
λ
=120°
Sine wave
λ
=180°
Reverse Power Dissipation (W)
(W)
8
Forward Power Dissipation
14
12
Square wave
λ
=180°
DC
6
α
=180°
10
8
4
WF
6
PR
4
2
2
Per 1element
0
0
2
4
6
8
10
12
14
16
18
0
0
20
40
60
80
100
120
140
160
Io Average Output Current (A)
VR
Reverse Voltage
(V)
3
YG858C15R
Current Derating (Io-Tc) (max.)
160
150
140
130
120
110
1000
http://www.fujisemi.com
FUJI Diode
Junction Capacitance Characteristic (max.)
(°C)
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
45
Case Temperature
DC
Junction Capacitance (pF)
Cj
100
Sine wave
λ
=180°
Square wave
λ
=180°
Square wave
λ
=120°
360°
Tc
I
0
λ
VR=75V
Square wave
λ
=60°
10
1
10
100
1000
Io:Output current of center-tap full wave connection
λ
:Conduction angle of forward current for each rectifier element
Io Average Output Current (A)
VR
Reverse Voltage (V)
Surge Capability (max.)
1000
IFSM Peak Half - Wave Current (A)
100
10
1
10
100
Number of Cycles at 50Hz
4
YG858C15R
Surge Current Ratings (max.)
http://www.fujisemi.com
FUJI Diode
1000
IFSM PeakHAlf-WaveCurrent (A)
100
10
10
100
tTime (ms) Sinewave
1 00 0
Transient Thermal Impedance (max.)
10
1
(°C/W)
Rth(j-c):2.0°C/W
Transient Thermal Impedance
10
0
10
-1
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
5
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