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KSD882GSTUO

Description
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size132KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSD882GSTUO Overview

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, TO-126, 3 PIN

KSD882GSTUO Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)90 MHz
KSD882 — NPN Epitaxial Silicon Transistor
November 2007
KSD882
NPN Epitaxial Silicon Transistor
Recommended Applications
• Audio Frequency Power Amplifier
Featuers
• Low Speed Switcing
• Complement to KSB772.
1
TO-126
2.Collector
3.Base
1. Emitter
Absolute Maximum Ratings*
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
C
I
B
P
D
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)**
Base Current
T
a
= 25°C unless otherwise noted
Parameter
Ratings
40
30
5
3
7
0.6
10
1
- 55 ~ +150
Units
V
V
V
A
A
A
W
W
°C
Total Device Dissipation(T
C
=25°C)
Total Device Dissipation(T
a
=25°C)
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** PW≤10ms, Duty Cycle≤50%
Electrical Characteristics.
T =25°C unless otherwise noted
a
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=500uA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500uA, I
C
=0
V
CB
= 30V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 2V, I
C
= 20mA
V
CE
= 2V, I
C
= 1A
I
C
= 2A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.2A
V
CE
= 5V, I
E
= 0.1A
V
CB
= 10V, I
E
= 0
f = 1MHz
Min.
40
30
5
Typ.
Max.
Units
V
V
V
1
1
30
60
150
160
0.3
1.0
90
45
400
0.5
2.0
µA
µA
V
V
MHz
pF
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
1
www.fairchildsemi.com
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