KTB1241O datasheet, PDF - EEWORLD Datasheet

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KTB1241O: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size76KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTB1241O Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN

KTB1241O Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-92
JESD-30 code	R-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURE

High Breakdown Voltage and High Current

: V

CEO

=-80V, I

=-1A.

Low V

CE(sat)

Complementary to KTD1863.

DEPTH:0.2

KTB1241

EPITAXIAL PLANAR PNP TRANSISTOR

DIM

MILLIMETERS

7.20 MAX

5.20 MAX

0.60 MAX

2.50 MAX

1.15 MAX

1.27

1.70 MAX

0.55 MAX

14.00 + 0.50

0.35 MIN

0.75 + 0.10

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

CBO

CEO

EBO

stg

RATING

-80

-5

-1

150

-55

150

UNIT

1. EMITTER

2. COLLECTOR

3. BASE

1.25

Φ1.50

0.10 MAX

12.50 + 0.50

1.00

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC

Collector Cut-off Current

Emitter-Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Note : h

Classification

O:70 140,

Y:120

CBO

EBO

)

TEST CONDITION

=-60V, I

=-4V, I

=-1mA, I

=-3V, I

=-100mA

=-500mA, I

=-50mA

=-5V, I

=-50mA, f=30MHz

=-10V, I

=0, f=1MHz

GR:200

400

MIN.

-80

TYP.

100

MAX.

-1

400

-0.4

MHz

UNIT

SYMBOL

(BR)CEO

(Note)

CE(sat)

240,

1998. 8. 21

Revision No : 1

1/2

KTB1241O Related Products

	KTB1241O	KTB1241GR	KTB1241Y
Description	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN
Maker	KEC	KEC	KEC
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	80 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	200	120
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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