KTB1241Y datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> KTB1241Y

Preview

KTB1241Y: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size76KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

Download Datasheet Parametric Compare View All

KTB1241Y Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN

KTB1241Y Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-92
JESD-30 code	R-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

Preview

Download Datasheet

View All

SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURE

High Breakdown Voltage and High Current

: V

CEO

=-80V, I

C

=-1A.

Low V

CE(sat)

Complementary to KTD1863.

C

P

DEPTH:0.2

B

KTB1241

EPITAXIAL PLANAR PNP TRANSISTOR

D

A

S

Q

K

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

MILLIMETERS

7.20 MAX

5.20 MAX

0.60 MAX

2.50 MAX

1.15 MAX

1.27

1.70 MAX

0.55 MAX

_

14.00 + 0.50

0.35 MIN

_

0.75 + 0.10

4

G

J

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

E

P

C

T

j

T

stg

RATING

-80

-5

-1

1

150

-55

150

UNIT

V

A

W

O

F

H

M

E

F

H

M

L

H

R

1

N

2

3

N

H

1. EMITTER

2. COLLECTOR

3. BASE

25

1.25

Φ1.50

0.10 MAX

_

12.50 + 0.50

1.00

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC

Collector Cut-off Current

Emitter-Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

Classification

O:70 140,

Y:120

I

CBO

I

EBO

)

TEST CONDITION

V

CB

=-60V, I

E

=0

V

EB

=-4V, I

C

=0

I

C

=-1mA, I

B

=0

V

CE

=-3V, I

C

=-100mA

I

C

=-500mA, I

B

=-50mA

V

CE

=-5V, I

C

=-50mA, f=30MHz

V

CB

=-10V, I

E

=0, f=1MHz

GR:200

400

MIN.

-

-80

70

-

TYP.

-

100

25

MAX.

-1

-

400

-0.4

-

V

MHz

pF

UNIT

A

V

SYMBOL

V

(BR)CEO

h

FE

(Note)

V

CE(sat)

f

T

C

ob

240,

1998. 8. 21

Revision No : 1

D

1/2

KTB1241Y Related Products

	KTB1241Y	KTB1241GR	KTB1241O
Description	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN
Maker	KEC	KEC	KEC
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	80 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	200	70
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

Recommended Resources

Bookshelf active speakers 03

Connection between PPMC and stepper motor dedicated drive integrated circuit

Power outage emergency lights (4)

Power outage emergency light circuit

Reverse-biased GaAsP light-emitting diode used as photosensor

LM339 fully automatic charger circuit

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components