KTB1772Y datasheet, PDF - EEWORLD Datasheet

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KTB1772Y: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size349KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTB1772Y Overview

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

KTB1772Y Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

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SEMICONDUCTOR

TECHNICAL DATA

AUDIO FREQUENCY POWER AMPLIFIER

LOW SPEED SWITCHING

B

KTB1772

EPITAXIAL PLANAR PNP TRANSISTOR

C

FEATURES

・Complementary

to KTD1882.

K

D

E

G

A

N

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

DC

Collector Current

Pulse (Note)

Base Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

I

CP

I

B

P

C

T

j

T

stg

-7

-0.6

625

150

-55½150

A

mW

℃

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

RATING

-40

-30

-5

-3

A

UNIT

H

V

L

F

1

2

3

M

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

J

1. EMITTER

2. COLLECTOR

3. BASE

TO-92

Note : Pulse Width

≦10mS,

Duty Cycle≦50%.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter-Cut-off Current

DC Current Gain

*

h

FE

(2) (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Collector Output Capacitance

*

V

CE(sat)

V

BE(sat)

f

T

C

ob

V

CE

=-2V, I

C

=-1A

I

C

=-2A, I

B

=-0.2A

I

C

=-2V, I

B

=-0.2A

V

CE

=-5V, I

C

=-0.1A

V

CB

=-10V, I

E

=0, f=1MHz

100

-

160

-0.3

-1.0

80

55

400

-0.5

-2.0

-

V

MHz

pF

SYMBOL

I

CBO

I

EBO

h

FE

(1)

TEST CONDITION

V

CB

=-30V, I

E

=0

V

EB

=-3V, I

C

=0

V

CE

=-2V, I

C

=-20mA

MIN.

-

30

TYP.

-

220

MAX.

-1

-

UNIT

μ

A

μ

A

* Pulse Test : Pulse Width≤350μ Duty Cycle≤2% Pulsed

S,

Note: h

FE

(2) Classification

O:100½200 , Y:160½320 , GR:200½400

2000. 12. 8

Revision No : 0

1/2

KTB1772Y Related Products

	KTB1772Y	KTB1772O	KTB1772GR
Description	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A	3 A
Collector-emitter maximum voltage	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	100	200
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz
Is Samacsys	-	N	N
Base Number Matches	-	1	1

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