Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | TO-220F |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 7 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 80 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 30 W |
| Maximum power dissipation(Abs) | 30 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| VCEsat-Max | 0.5 V |
| KSD1588-O | KSD1588 | KSD1588-R | KSD1588-Y | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | TO-220F | TO-220F | TO-220F | TO-220F |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 7 A | 7 A | 7 A | 7 A |
| Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 80 | 20 | 40 | 100 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 30 W | 30 W | 30 W | 30 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Is it Rohs certified? | incompatible | - | incompatible | incompatible |
| JESD-609 code | e0 | - | e0 | e0 |
| Maximum power consumption environment | 30 W | - | 30 W | 30 W |
| Terminal surface | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| VCEsat-Max | 0.5 V | - | 0.5 V | 0.5 V |
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