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KSE13005J69Z

Description
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size84KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSE13005J69Z Overview

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSE13005J69Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
KSE13004/13005
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCH MODE APPLICATION
High Speed Switching
Suitable for Switching Regulator and Motor Control
TO-220
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector Base Voltage : KSE13004
: KSE13005
Collector Emitter Voltage : KSE13004
: KSE13005
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
Rating
600
700
300
400
9
4
8
2
75
150
-65 ~ 150
Unit
V
V
V
V
V
A
A
W
W
°C
°C
1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS
(
T
C
=25°C)
Characteristic
Collector Emitter Sustaining Voltage : KSE13004
: KSE13005
Emitter Cutoff Current
* DC Current Gain
* Collector Emitter Saturation Voltage
Symbol
V
CEO
(sus)
I
EBO
h
FE
V
CE
(sat)
Test Conditions
I
C
= 10mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 2A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
I
C
= 4A, I
B
= 1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
V
CB
= 10V, f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
= 125V, I
C
= 2A
I
B1
= -I
B2
= 0.4A
Min
300
400
10
8
1
60
40
0.5
0.6
1
1.2
1.6
65
4
0.8
4
0.9
Typ
Max
Unit
V
V
mA
* Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
V
BE
(sat)
C
OB
f
T
t
ON
t
S
t
F
V
V
V
V
V
pF
MHz
µs
µs
µs
Rev. B
©
1999 Fairchild Semiconductor Corporation

KSE13005J69Z Related Products

KSE13005J69Z KSE13004J69Z
Description Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 4A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Maker Fairchild Fairchild
Parts packaging code SFM SFM
package instruction TO-220, 3 PIN TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code unknown unknown
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 400 V 300 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 8 8
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz
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