KSC2755
KSC2755
RF AMP, FOR VHF &TV TUNER
• Low NF, High G
PE
• Forward AGC Capability to 30 dB
• NF=2.0dB (TYP.), G
PE
=23dB (TYP.) at f=200MHz
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
30
5
20
150
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
f
T
C
RE
G
PE
I
AGC
NF
Parameter
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Current
Noise Figure
Test Condition
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=3mA
V
CE
=10V, I
C
=3mA
f=1MHz, V
CB
=10V, I
E
=0
V
CE
=10V, I
C
=3mA
f=200MHz
f=200MHz
I
E
at G
R
= -30dB
V
CE
=10V, I
C
=3mA
f=200MHz
20
Min.
60
400
Typ.
120
600
0.3
23
-10
2.0
-12
0.3
0.5
Max.
0.1
240
MHz
pF
dB
mA
dB
Units
µA
h
FE
Classification
Classification
h
FE
R
60 ~ 120
Marking
O
90 ~ 180
Y
120 ~ 240
H1 O
h
FE
grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2755
Typical Characteristics
I
B
= 120
µ
A
I
B
= 140
µ
A
I
B
= 100
µ
A
10
1000
V
CE
= 10V
I
C
[mA], COLLECTOR CURRENT
8
h
FE
, DC CURRENT GAIN
I
B
= 80
µ
A
6
100
I
B
= 60
µ
A
4
I
B
= 40
µ
A
I
B
= 20
µ
A
10
2
0
0
2
4
6
8
10
1
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10000
10000
V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
= 10 I
B
1000
V
BE
(sat)[mV], SATURATION VOLTAGE
I
C
= 10 I
B
1000
100
10
0.1
1
10
100
100
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
10
C
re
[pF], REVERSE TRANSFER CAPACITANCE
V
CE
= 10 V
f = 1 MHz
I
E
= 0
100
1
10
0.1
1
10
100
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. f
T
- I
C
Figure 6. Cre - V
CB
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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2
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E
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I
2
C™
Across the board. Around the world.™
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®
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®
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1