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KSC2755YMTF

Description
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size75KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSC2755YMTF Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN,

KSC2755YMTF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.02 A
Collector-based maximum capacity0.5 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)600 MHz
KSC2755
KSC2755
RF AMP, FOR VHF &TV TUNER
• Low NF, High G
PE
• Forward AGC Capability to 30 dB
• NF=2.0dB (TYP.), G
PE
=23dB (TYP.) at f=200MHz
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
30
5
20
150
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
f
T
C
RE
G
PE
I
AGC
NF
Parameter
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Current
Noise Figure
Test Condition
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=3mA
V
CE
=10V, I
C
=3mA
f=1MHz, V
CB
=10V, I
E
=0
V
CE
=10V, I
C
=3mA
f=200MHz
f=200MHz
I
E
at G
R
= -30dB
V
CE
=10V, I
C
=3mA
f=200MHz
20
Min.
60
400
Typ.
120
600
0.3
23
-10
2.0
-12
0.3
0.5
Max.
0.1
240
MHz
pF
dB
mA
dB
Units
µA
h
FE
Classification
Classification
h
FE
R
60 ~ 120
Marking
O
90 ~ 180
Y
120 ~ 240
H1 O
h
FE
grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

KSC2755YMTF Related Products

KSC2755YMTF KSC2755OMTF
Description RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN,
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.02 A 0.02 A
Collector-based maximum capacity 0.5 pF 0.5 pF
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 90
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 600 MHz 600 MHz
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