Important notice
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NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 32 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
handbook, halfpage
BCW60 series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
MARKING
TYPE NUMBER
BCW60B
BCW60C
BCW60D
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
32
32
5
100
200
200
250
+150
150
+150
MARKING CODE
(1)
AB∗
AC∗
AD∗
Top view
1
2
MAM255
2
Fig.1 Simplified outline (SOT23) and symbol.
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 22
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCW60B
BCW60C
BCW60D
DC current gain
BCW60B
BCW60C
BCW60D
DC current gain
BCW60B
BCW60C
BCW60D
V
CEsat
V
BEsat
V
BE
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10
μA;
V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 50 mA; V
CE
= 1 V
C
c
C
e
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector capacitance
emitter capacitance
transition frequency
noise figure
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz; note 1
I
C
= 200
μA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
I
C
= 50 mA; V
CE
= 1 V
70
90
100
50
100
600
0.7
−
550
−
−
100
−
−
−
−
−
−
−
−
I
C
= 2 mA; V
CE
= 5 V
180
250
380
−
−
−
CONDITIONS
I
E
= 0; V
CB
= 32 V
I
E
= 0; V
CB
= 32 V; T
amb
= 150
°C
I
C
= 0; V
EB
= 4 V
I
C
= 10
μA;
V
CE
= 5 V
20
40
100
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BCW60 series
VALUE
500
UNIT
K/W
TYP.
−
−
−
MAX.
20
20
20
−
−
−
310
460
630
−
−
−
350
550
850
1.05
−
750
−
−
−
−
6
UNIT
nA
μA
nA
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
dB
520
650
780
1.7
11
250
2
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
−
1999 Apr 22
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BCW60 series
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 22
4
Embedded System
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