BCW60 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
0.031 (0.8)
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
0.035 (0.9)
0.079 (2.0)
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking
Code:
BCW60A = AA
BCW60B = AB
BCW60C = AC
BCW60D = AD
Features
• NPN Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary types, BCW61 Series PNP
transistors are recommended.
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage (V
BE
=0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
Note:
(1) Mounted on FR-4 printed-ciruit board.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
S
R
ΘJA
Value
32
32
5.0
100
200
50
250
150
–65 to +150
500
(1)
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C/W
Document Number 88170
09-May-02
www.vishay.com
1
BCW60 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Parameter
DC Current Gain
at V
CE
= 5V, I
C
= 10
at V
CE
= 5V, I
C
= 10
at V
CE
= 5V, I
C
= 10
at V
CE
= 5V, I
C
= 10
at V
CE
=
at V
CE
=
at V
CE
=
at V
CE
=
at V
CE
=
at V
CE
=
at V
CE
=
at V
CE
=
5V,
5V,
5V,
5V,
1V,
1V,
1V,
1V,
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
2
2
2
2
µA
µA
µA
µA
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
BCW60A
BCW60B
BCW60C
BCW60D
BCW60A
BCW60B
BCW60C
BCW60D
BCW60A
BCW60B
BCW60C
BCW60D
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
V
BE
I
CES
Min.
–
20
40
100
120
180
250
380
50
70
90
100
50
100
600
700
550
–
–
–
–
–
TYP.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
650
520
780
–
–
–
Max.
–
–
–
–
220
310
460
630
–
–
–
–
350
550
850
1050
750
–
–
20
20
20
Unit
–
–
–
–
–
–
–
–
–
–
–
–
mV
mV
mV
mV
mV
mV
mV
nA
µA
nA
mA
mA
mA
mA
mA
mA
mA
mA
50
50
50
50
Collector-Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.25 mA
at I
C
= 50 mA, I
B
= 1.25 mA
Base-Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.25 mA
at I
C
= 50 mA, I
B
= 1.25 mA
Base-Emitter Voltage
at V
CE
= 5V, I
C
= 2 mA
at V
CE
= 5V, I
C
= 10
µA
at V
CE
= 1V, I
C
= 50 mA
Collector-Emitter Cut-off Current
at V
CE
= 32V, V
BE
= 0V
at V
CE
= 32V, V
BE
= 0V, T
A
= 150°C
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
Gain-Bandwidth Product
at V
CE
= 5V, I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance
at V
CB
= 10V, f = 1 MH
Z,
I
E
=0
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1 MH
Z
, I
C
=0
Noise Figure
at V
CE
= 5V, I
C
= 200
µA,
R
S
= 2 kΩ, f = 1kHz, B = 200Hz
Small Signal Current Gain
at V
CE
= 5V, I
C
= 2 mA, f = 1.0 kH
Z
BCW60A
BCW60B
BCW60C
BCW60D
I
EBO
f
T
C
CBO
C
EBO
100
–
–
250
2.5
8
–
–
–
MHz
pF
pF
F
–
–
–
–
–
–
–
2
200
260
330
520
85
480
6
dB
h
fe
Turn-on Time at R
L
= 990Ω (see fig. 1)
V
CC
= 10V, Ic = 10mA, I
B(on)
= –I
B(off)
= 1mA
Turn-off Time at R
L
= 990Ω (see fig. 1)
V
CC
= 10V, Ic = 10mA, I
B(on)
= –I
B(off)
= 1mA
www.vishay.com
2
t
on
t
off
150
800
ns
ns
Document Number 88170
09-May-02
Microchip MCU
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