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KSH32CI

Description
3 A, 100 V, PNP, Si, POWER TRANSISTOR, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size85KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

KSH32CI Overview

3 A, 100 V, PNP, Si, POWER TRANSISTOR, IPAK-3

KSH32CI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
This Material Copyrighted By Its Respective Manufacturer

KSH32CI Related Products

KSH32CI KSH32I
Description 3 A, 100 V, PNP, Si, POWER TRANSISTOR, IPAK-3 3 A, 40 V, PNP, Si, POWER TRANSISTOR, IPAK-3
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown unknown
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 100 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
JESD-30 code R-PSIP-T3 R-PSIP-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
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