KSH32/32C
KSH32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP32 and TIP32C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
: KSH32
: KSH32C
: KSH32
: KSH32C
Value
- 40
- 100
- 40
- 100
-5
-3
-5
-1
15
1.56
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: KSH32
: KSH32C
Collector Cut-off Current
: KSH32
: KSH32C
I
CES
Collector Cut-off Current
: KSH32
: KSH32C
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= - 40V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 3, I
B
= - 375mA
V
CE
= - 4A, I
C
= - 3A
V
CE
= -10V, I
C
= - 500mA
3
25
10
-20
-20
-1
50
-1.2
-1.8
V
V
MHz
µA
µA
mA
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
-50
-50
µA
µA
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
-40
-100
Max.
Units
V
V
I
CEO
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH32/32C
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
1
-0.01
-0.1
-1
-10
-0.01
-1E-3
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
t
C
= 10.I
B
C
ob
(pF), CAPACITANCE
t
R
, t
D
[
µ
s], TURN ON TIME
1
100
t
R
, V
CC
=-30V
t
R
, V
CC
=-10V
0.1
10
t
D
, V
BE
(off)=-2V
1
-0.1
-0.01
-1
-10
-100
-0.1
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance
Figure 4. Turn On Time
-10
I
C
= 10.I
B
I
CP
(max)
0
µ
10
s
t
F
, t
STG
[
µ
s], TURN OFF TIME
I
C
[A], COLLECTOR CURRENT
0
µ
50
I
C
(max)
s
1m
s
1
t
STG
t
F
, V
CC
=-30V
-1
DC
t
F
, V
CC
(off)=-10V
-0.1
-0.01
-0.1
-1
-10
-0.01
-1
-10
-100
-1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
KSH32
KSH32C
0.1
Rev. A4, October 2002
stm32/stm8
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