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KN4A4Z

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, USM, SC-75, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size345KB,22 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

KN4A4Z Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, USM, SC-75, 3 PIN

KN4A4Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionUSM, SC-75, 3 PIN
Reach Compliance Codecompliant
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
DATA SHEET
SILICON TRANSISTOR
KN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FEATURES
Compact package
Resistors built-in type
Complementary to KA4xxx
1.6 ± 0.1
0.8 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
ORDERING INFORMATION
PART NUMBER
KN4xxx
PACKAGE
SC-75 (USM)
3
0 to 0.1
2
1
0.2
+0.1
–0
0.5
0.5
1.0
1.6 ± 0.1
0.6
0.75 ± 0.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Note2
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
−60
−50
Note1
V
V
V
A
A
2
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
−0.1
−0.2
0.2
150
–55 to +150
Total Power Dissipation
Note3
Junction Temperature
Storage Temperature
Note 1.
PART NUMBER
W
°C
°C
R
1
R
2
1
V
EBO
(V)
−10
−10
−10
−10
−5
−5
−5
−5
−5
MARK
R
1
(kΩ)
R
2
(kΩ)
10.0
22.0
47.0
4.7
10.0
PART NUMBER
V
EBO
(V)
−15
−5
−5
−5
−10
−5
−5
−15
−25
MARK
R
1
(kΩ)
R
2
(kΩ)
22.0
KN4A4M
KN4F4M
KN4L4M
KN4L3M
KN4L3N
KN4L3Z
KN4A3Q
KN4A4P
KN4F4N
A7
B7
C7
D7
E7
F7
G7
H7
X7
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
KN4L4L
KN4A4Z
KN4F4Z
KN4L4Z
KN4F3M
KN4F3P
K7
Y7
Z7
N7
P7
Q7
R7
S7
T7
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
2.2
10.0
47.0
4.7
10.0
10.0
47.0
47.0
KN4F3R
KN4A4L
KN4L4K
<R>
Note 2.
PW
10 ms, Duty Cycle
50%
2
Note 3.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16489EJ5V0DS00 (5th edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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