MX29LV008CBTI-55R datasheet, PDF

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MX29LV008CBTI-55R: DescriptionFlash, 1MX8, 55ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40; Categorystorage storage; File Size337KB，54 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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MX29LV008CBTI-55R Overview

Flash, 1MX8, 55ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40

MX29LV008CBTI-55R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Macronix
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP40,.8,20
Contacts	40
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	55 ns
startup block	BOTTOM
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G40
JESD-609 code	e0
length	18.4 mm
memory density	8388608 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	1,2,1,15
Number of terminals	40
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP40,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	10 mm

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MX29LV008C T/B

8M-BIT [1M x 8] CMOS SINGLE VOLTAGE

3V ONLY BOOT SECTOR FLASH MEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55R/70/90ns

•

Fully compatible with MX29LV008BT/BB device

• Low power consumption

- 20mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte Programming (7us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase.

• Status Reply

- Data# Polling & Toggle bit for detection of program

and erase operation completion.

• Ready/Busy# pin (RY/BY#)

- Provides a hardware method of detecting program or

erase operation completion.

• Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotect allows code changes in

previously locked sectors.

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Package type:

- 40-pin TSOP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 20 years data retention

GENERAL DESCRIPTION

The MX29LV008C T/B is a 8-mega bit Flash memory

organized as 1M bytes of 8 bits. MXIC's Flash memo-

ries offer the most cost-effective and reliable read/write

non-volatile random access memory. The MX29LV008C

T/B is packaged in 40-pin TSOP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29LV008C T/B offers access time as

fast as 55ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV008C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV008C T/B uses a command register to manage

this functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV008C T/B uses a 2.7V~3.6V VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM1185

REV. 1.0, JUN. 30, 2005

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