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MRF6S21140HSR3

Description
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,12 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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MRF6S21140HSR3 Overview

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN

MRF6S21140HSR3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
package instructionROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN
Contacts3
Manufacturer packaging codeCASE 465C-02
Reach Compliance Codeunknown
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage68 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFP-F2
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceNOT SPECIFIED
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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MRF6S21140HSR3 Related Products

MRF6S21140HSR3 MRF6S21140HR3
Description S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880, CASE 465B-03, 3 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Rochester Electronics Rochester Electronics
package instruction ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN ROHS COMPLIANT, NI-880, CASE 465B-03, 3 PIN
Contacts 3 3
Manufacturer packaging code CASE 465C-02 CASE 465B-03
Reach Compliance Code unknown unknown
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 68 V 68 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band S BAND S BAND
JESD-30 code R-CDFP-F2 R-CDFM-F3
Humidity sensitivity level NOT SPECIFIED NOT APPLICABLE
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status COMMERCIAL COMMERCIAL
surface mount YES YES
Terminal surface NOT SPECIFIED NOT SPECIFIED
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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