DM2240J3-12 datasheet, PDF - EEWORLD Datasheet

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DM2240J3-12: DescriptionCache DRAM, 4MX1, 30ns, MOS, PDSO28; Categorystorage storage; File Size625KB，16 Pages; ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation); Websitehttp://www.cypress.com/

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DM2240J3-12 Overview

Cache DRAM, 4MX1, 30ns, MOS, PDSO28

DM2240J3-12 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Ramtron International Corporation (Cypress Semiconductor Corporation)
package instruction	SOJ, SOJ28,.34
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST EDO/STATIC COLUMN
Maximum access time	30 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM
I/O type	SEPARATE
JESD-30 code	R-PDSO-J28
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	CACHE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	28
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	1024
self refresh	NO
Maximum standby current	0.001 A
Maximum slew rate	0.225 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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DM2240J3-12 Related Products

	DM2240J3-12	DM2240J3-12I	DM2240T3-15I	DM2240J2-15	DM2240J2-15I	DM2240T2-15I	DM2240J2-12	DM2240J2-12I	DM2240T2-12L
Description	Cache DRAM, 4MX1, 30ns, MOS, PDSO28	Cache DRAM, 4MX1, 30ns, MOS, PDSO28	Cache DRAM, 4MX1, 35ns, MOS, PDSO44	Cache DRAM, 4MX1, 35ns, MOS, PDSO28	Cache DRAM, 4MX1, 35ns, MOS, PDSO28	Cache DRAM, 4MX1, 35ns, MOS, PDSO44	Cache DRAM, 4MX1, 30ns, MOS, PDSO28	Cache DRAM, 4MX1, 30ns, MOS, PDSO28	Cache DRAM, 4MX1, 30ns, MOS, PDSO44
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)
package instruction	SOJ, SOJ28,.34	SOJ, SOJ28,.34	TSOP, TSOP44,.36,32	SOJ, SOJ28,.34	SOJ, SOJ28,.34	TSOP, TSOP44,.36,32	SOJ, SOJ28,.34	SOJ, SOJ28,.34	TSOP, TSOP44,.36,32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN	FAST EDO/STATIC COLUMN
Maximum access time	30 ns	30 ns	35 ns	35 ns	35 ns	35 ns	30 ns	30 ns	30 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 8K X 1 SRAM	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 8K X 1 SRAM
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDSO-J28	R-PDSO-J28	R-PDSO-G44	R-PDSO-J28	R-PDSO-J28	R-PDSO-G44	R-PDSO-J28	R-PDSO-J28	R-PDSO-G44
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bi
Memory IC Type	CACHE DRAM	CACHE DRAM	CACHE DRAM	CACHE DRAM	CACHE DRAM	CACHE DRAM	CACHE DRAM	CACHE DRAM	CACHE DRAM
memory width	1	1	1	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	28	28	44	28	28	44	28	28	44
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	85 °C	70 °C	85 °C	85 °C	70 °C	85 °C	70 °C
Minimum operating temperature	-	-40 °C	-40 °C	-	-40 °C	-40 °C	-	-40 °C	-
organize	4MX1	4MX1	4MX1	4MX1	4MX1	4MX1	4MX1	4MX1	4MX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	SOJ	TSOP	SOJ	SOJ	TSOP	SOJ	SOJ	TSOP
Encapsulate equivalent code	SOJ28,.34	SOJ28,.34	TSOP44,.36,32	SOJ28,.34	SOJ28,.34	TSOP44,.36,32	SOJ28,.34	SOJ28,.34	TSOP44,.36,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	1024	1024	1024	1024	1024	1024	1024	1024	1024
self refresh	NO	NO	NO	NO	NO	NO	NO	NO	YES
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.225 mA	0.225 mA	0.18 mA	0.18 mA	0.18 mA	0.18 mA	0.225 mA	0.225 mA	0.225 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	MOS	MOS	MOS	MOS	MOS	MOS	MOS	MOS	MOS
Temperature level	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	GULL WING	J BEND	J BEND	GULL WING	J BEND	J BEND	GULL WING
Terminal pitch	1.27 mm	1.27 mm	0.8 mm	1.27 mm	1.27 mm	0.8 mm	1.27 mm	1.27 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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